SIZF300DT-T1-GE3 Datenblatt
SIZF300DT-T1-GE3 Datenblatt
Total Pages: 13
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Vishay Siliconix
Dieses Datenblatt behandelt 1 Teilenummern:
SIZF300DT-T1-GE3
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Hersteller Vishay Siliconix Serie TrenchFET® Gen IV FET-Typ 2 N-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 23A (Ta), 75A (Tc), 34A (Ta), 141A (Tc) Rds On (Max) @ Id, Vgs 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V Vgs (th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 22nC @ 10V, 62nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1100pF @ 15V, 3150pF @ 15V Leistung - max 3.8W (Ta), 48W (Tc), 4.3W (Ta), 74W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-PowerWDFN Lieferantengerätepaket 8-PowerPair® (6x5) |
