SI4943CDY-T1-E3 Datenblatt
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Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A Rds On (Max) @ Id, Vgs 19.2mOhm @ 8.3A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1945pF @ 10V Leistung - max 3.1W Betriebstemperatur -50°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ 2 P-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A Rds On (Max) @ Id, Vgs 19.2mOhm @ 8.3A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 62nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1945pF @ 10V Leistung - max 3.1W Betriebstemperatur -50°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
