SI4778DY-T1-GE3 Datenblatt
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Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs (th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 680pF @ 13V FET-Funktion - Verlustleistung (max.) 2.4W (Ta), 5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SO Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
Hersteller Vishay Siliconix Serie TrenchFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 25V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs (th) (Max) @ Id 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 680pF @ 13V FET-Funktion - Verlustleistung (max.) 2.4W (Ta), 5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-SO Paket / Fall 8-SOIC (0.154", 3.90mm Width) |
