NVMFS5C404NWFT3G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |
Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 53A (Ta), 378A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. - Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 0.7mOhm @ 50A, 10V Vgs (th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 128nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 8400pF @ 25V FET-Funktion - Verlustleistung (max.) 3.9W (Ta), 200W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |
