NVMFD5C650NLT1G Datenblatt
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Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ 2 N-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 21A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V Vgs (th) (Max) @ Id 2.2V @ 98µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 2546pF @ 25V Leistung - max 3.5W (Ta), 125W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Paket / Fall 8-PowerTDFN Lieferantengerätepaket 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
Hersteller ON Semiconductor Serie Automotive, AEC-Q101 FET-Typ 2 N-Channel (Dual) FET-Funktion Standard Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 21A (Ta), 111A (Tc) Rds On (Max) @ Id, Vgs 4.2mOhm @ 20A, 10V Vgs (th) (Max) @ Id 2.2V @ 98µA Gate Charge (Qg) (Max) @ Vgs 16nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 2546pF @ 25V Leistung - max 3.5W (Ta), 125W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Paket / Fall 8-PowerTDFN Lieferantengerätepaket 8-DFN (5x6) Dual Flag (SO8FL-Dual) |
