NTMFS4983NFT3G Datenblatt
ON Semiconductor Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 22A (Ta), 106A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 47.9nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3250pF @ 15V FET-Funktion - Verlustleistung (max.) 1.7W (Ta), 38W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |
ON Semiconductor Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 22A (Ta), 106A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 2.1mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 47.9nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3250pF @ 15V FET-Funktion - Verlustleistung (max.) 1.7W (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN |