NTMFS4898NFT1G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 13.2A (Ta), 117A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 49.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3233pF @ 12V FET-Funktion - Verlustleistung (max.) 930mW (Ta), 73.5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 13.2A (Ta), 117A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 3mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 49.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 3233pF @ 12V FET-Funktion - Verlustleistung (max.) 930mW (Ta), 73.5W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
