NTMFS4851NT3G Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.5A (Ta), 66A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 1850pF @ 12V FET-Funktion - Verlustleistung (max.) 870mW (Ta), 41.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 9.5A (Ta), 66A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 11.5V Rds On (Max) @ Id, Vgs 5.9mOhm @ 30A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V Vgs (Max) ±16V Eingangskapazität (Ciss) (Max) @ Vds 1850pF @ 12V FET-Funktion - Verlustleistung (max.) 870mW (Ta), 41.7W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 5-DFN (5x6) (8-SOFL) Paket / Fall 8-PowerTDFN, 5 Leads |
