IRF8915 Datenblatt
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8.9A Rds On (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 540pF @ 10V Leistung - max 2W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8.9A Rds On (Max) @ Id, Vgs 18.3mOhm @ 8.9A, 10V Vgs (th) (Max) @ Id 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 7.4nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 540pF @ 10V Leistung - max 2W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
