IRF7752GTRPBF Datenblatt
IRF7752GTRPBF Datenblatt
Total Pages: 8
Größe: 228,8 KB
Infineon Technologies
Website: https://www.infineon.com
Dieses Datenblatt behandelt 1 Teilenummern:
IRF7752GTRPBF
![IRF7752GTRPBF Datenblatt Seite 1](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0001.webp)
![IRF7752GTRPBF Datenblatt Seite 2](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0002.webp)
![IRF7752GTRPBF Datenblatt Seite 3](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0003.webp)
![IRF7752GTRPBF Datenblatt Seite 4](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0004.webp)
![IRF7752GTRPBF Datenblatt Seite 5](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0005.webp)
![IRF7752GTRPBF Datenblatt Seite 6](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0006.webp)
![IRF7752GTRPBF Datenblatt Seite 7](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0007.webp)
![IRF7752GTRPBF Datenblatt Seite 8](http://pneda.ltd/static/datasheets/images/28/irf7752gtrpbf-0008.webp)
Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 4.6A Rds On (Max) @ Id, Vgs 30mOhm @ 4.6A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 9nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 861pF @ 25V Leistung - max 1W Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-TSSOP (0.173", 4.40mm Width) Lieferantengerätepaket 8-TSSOP |