IPP45P03P4L11AKSA1 Datenblatt
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Hersteller Infineon Technologies Serie OptiMOS™ FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 45A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 45A, 10V Vgs (th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) +5V, -16V Eingangskapazität (Ciss) (Max) @ Vds 3770pF @ 25V FET-Funktion - Verlustleistung (max.) 58W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Through Hole Lieferantengerätepaket PG-TO220-3-1 Paket / Fall TO-220-3 |
Hersteller Infineon Technologies Serie OptiMOS™ FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 45A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 11.1mOhm @ 45A, 10V Vgs (th) (Max) @ Id 2V @ 85µA Gate Charge (Qg) (Max) @ Vgs 55nC @ 10V Vgs (Max) +5V, -16V Eingangskapazität (Ciss) (Max) @ Vds 3770pF @ 25V FET-Funktion - Verlustleistung (max.) 58W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Through Hole Lieferantengerätepaket PG-TO262-3 Paket / Fall TO-262-3 Long Leads, I²Pak, TO-262AA |
