FQD4N20LTF Datenblatt
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Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.2A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.6A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 310pF @ 25V FET-Funktion - Verlustleistung (max.) 2.5W (Ta), 30W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D-Pak Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.2A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 1.35Ohm @ 1.6A, 10V Vgs (th) (Max) @ Id 2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 5.2nC @ 5V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 310pF @ 25V FET-Funktion - Verlustleistung (max.) 2.5W (Ta), 30W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D-Pak Paket / Fall TO-252-3, DPak (2 Leads + Tab), SC-63 |
