FQB2N80TM Datenblatt
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Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.4A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 550pF @ 25V FET-Funktion - Verlustleistung (max.) 3.13W (Ta), 85W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D²PAK (TO-263AB) Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Hersteller ON Semiconductor Serie QFET® FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 800V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 2.4A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 6.3Ohm @ 900mA, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 550pF @ 25V FET-Funktion - Verlustleistung (max.) 3.13W (Ta), 85W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket I2PAK Paket / Fall TO-262-3 Long Leads, I²Pak, TO-262AA |
