FDPF33N25TRDTU Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. - Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 2135pF @ 25V FET-Funktion - Verlustleistung (max.) 37W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220F (LG-Formed) Paket / Fall TO-220-3 Full Pack, Formed Leads |
Hersteller ON Semiconductor Serie UniFET™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 250V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 33A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 94mOhm @ 16.5A, 10V Vgs (th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V Vgs (Max) ±30V Eingangskapazität (Ciss) (Max) @ Vds 2135pF @ 25V FET-Funktion - Verlustleistung (max.) 37W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220F Paket / Fall TO-220-3 Full Pack |
