FDMS1D2N03DSD Datenblatt
FDMS1D2N03DSD Datenblatt
Total Pages: 13
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ON Semiconductor
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FDMS1D2N03DSD
ON Semiconductor Hersteller ON Semiconductor Serie PowerTrench® FET-Typ 2 N-Channel (Dual) Asymmetrical FET-Funktion Standard Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 19A (Ta), 70A (Tc), 37A (Ta), 164A (Tc) Rds On (Max) @ Id, Vgs 3.25mOhm @ 19A, 10V, 0.97mOhm @ 37A, 10V Vgs (th) (Max) @ Id 2.5V @ 320µA, 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 33nC @ 10V, 117nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 1410pF @ 15V, 4860pF @ 15V Leistung - max 2.1W (Ta), 26W (Tc), 2.3W (Ta), 42W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-PowerWDFN Lieferantengerätepaket 8-PQFN (5x6) |