FDMJ1032C Datenblatt
FDMJ1032C Datenblatt
Total Pages: 11
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ON Semiconductor
Website: http://www.onsemi.com/
Dieses Datenblatt behandelt 1 Teilenummern:
FDMJ1032C
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Hersteller ON Semiconductor Serie PowerTrench® FET-Typ N and P-Channel FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 3.2A, 2.5A Rds On (Max) @ Id, Vgs 90mOhm @ 3.2A, 4.5V Vgs (th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 3nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 270pF @ 10V Leistung - max 800mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-WFDFN Exposed Pad Lieferantengerätepaket SC-75, MicroFET |