ECH8601M-TL-H-P Datenblatt
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Hersteller ON Semiconductor Serie - FET-Typ 2 N-Channel (Dual) Common Drain FET-Funktion Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 24V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A (Ta) Rds On (Max) @ Id, Vgs 23mOhm @ 4A, 4.5V Vgs (th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max - Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SMD, Flat Lead Lieferantengerätepaket 8-ECH |
Hersteller ON Semiconductor Serie - FET-Typ 2 N-Channel (Dual) Common Drain FET-Funktion Logic Level Gate, 2.5V Drive Drain to Source Voltage (Vdss) 24V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 8A (Ta) Rds On (Max) @ Id, Vgs 23mOhm @ 4A, 4.5V Vgs (th) (Max) @ Id 1.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max - Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SMD, Flat Lead Lieferantengerätepaket 8-ECH |
