DMP56D0UFB-7 Datenblatt
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Hersteller Diodes Incorporated Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 4V Vgs (th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 50.54pF @ 25V FET-Funktion - Verlustleistung (max.) 425mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 3-DFN1006 (1.0x0.6) Paket / Fall 3-UFDFN |
Hersteller Diodes Incorporated Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 50V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 200mA (Ta) Antriebsspannung (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 6Ohm @ 100mA, 4V Vgs (th) (Max) @ Id 1.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.58nC @ 4V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 50.54pF @ 25V FET-Funktion - Verlustleistung (max.) 425mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 3-DFN1006 (1.0x0.6) Paket / Fall 3-UFDFN |
