DMP2023UFDF-13 Datenblatt
|
Hersteller Diodes Incorporated Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 7.6A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 7A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 1837pF @ 15V FET-Funktion - Verlustleistung (max.) 730mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket U-DFN2020-6 (Type F) Paket / Fall 6-UDFN Exposed Pad |
Hersteller Diodes Incorporated Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 7.6A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 1.5V, 4.5V Rds On (Max) @ Id, Vgs 27mOhm @ 7A, 4.5V Vgs (th) (Max) @ Id 1V @ 250µA Gate Charge (Qg) (Max) @ Vgs 27nC @ 4.5V Vgs (Max) ±8V Eingangskapazität (Ciss) (Max) @ Vds 1837pF @ 15V FET-Funktion - Verlustleistung (max.) 730mW (Ta) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket U-DFN2020-6 (Type F) Paket / Fall 6-UDFN Exposed Pad |
