DMN53D0LDW-13 Datenblatt
Diodes Incorporated Hersteller Diodes Incorporated Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 50V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 360mA Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 46pF @ 25V Leistung - max 310mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-TSSOP, SC-88, SOT-363 Lieferantengerätepaket SOT-363 |
Diodes Incorporated Hersteller Diodes Incorporated Serie - FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 50V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 360mA Rds On (Max) @ Id, Vgs 1.6Ohm @ 500mA, 10V Vgs (th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.6nC @ 4.5V Eingangskapazität (Ciss) (Max) @ Vds 46pF @ 25V Leistung - max 310mW Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Paket / Fall 6-TSSOP, SC-88, SOT-363 Lieferantengerätepaket SOT-363 |