DB157G Datenblatt
GeneSiC Semiconductor Hersteller GeneSiC Semiconductor Serie - Diodentyp Single Phase Technologie Standard Spannung - Peak Reverse (Max) 1kV Current - Average Rectified (Io) 1.5A Spannung - Vorwärts (Vf) (Max) @ If 1.1V @ 1.5A Strom - Umkehrleckage @ Vr 5µA @ 1000V Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Paket / Fall 4-EDIP (0.321", 8.15mm) Lieferantengerätepaket DB |
GeneSiC Semiconductor Hersteller GeneSiC Semiconductor Serie - Diodentyp Single Phase Technologie Standard Spannung - Peak Reverse (Max) 800V Current - Average Rectified (Io) 1.5A Spannung - Vorwärts (Vf) (Max) @ If 1.1V @ 1.5A Strom - Umkehrleckage @ Vr 5µA @ 800V Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Paket / Fall 4-EDIP (0.321", 8.15mm) Lieferantengerätepaket DB |
GeneSiC Semiconductor Hersteller GeneSiC Semiconductor Serie - Diodentyp Single Phase Technologie Standard Spannung - Peak Reverse (Max) 600V Current - Average Rectified (Io) 1.5A Spannung - Vorwärts (Vf) (Max) @ If 1.1V @ 1.5A Strom - Umkehrleckage @ Vr 5µA @ 600V Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Through Hole Paket / Fall 4-EDIP (0.321", 8.15mm) Lieferantengerätepaket DB |