BUK764R3-40B Datenblatt
BUK764R3-40B Datenblatt
Total Pages: 15
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NXP
Dieses Datenblatt behandelt 1 Teilenummern:
BUK764R3-40B,118
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Hersteller NXP USA Inc. Serie TrenchMOS™ FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 75A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 4.3mOhm @ 25A, 10V Vgs (th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 69nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 4824pF @ 25V FET-Funktion - Verlustleistung (max.) 254W (Tc) Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket D2PAK Paket / Fall TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |