BBL4001 Datenblatt
|
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 74A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 37A, 10V Vgs (th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6900pF @ 20V FET-Funktion - Verlustleistung (max.) 2W (Ta), 35W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220-3 Fullpack/TO-220F-3SG Paket / Fall TO-220-3 Full Pack |
Hersteller ON Semiconductor Serie - FET-Typ N-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 74A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 6.1mOhm @ 37A, 10V Vgs (th) (Max) @ Id 2.6V @ 1mA Gate Charge (Qg) (Max) @ Vgs 135nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 6900pF @ 20V FET-Funktion - Verlustleistung (max.) 2W (Ta), 35W (Tc) Betriebstemperatur 150°C (TJ) Montagetyp Through Hole Lieferantengerätepaket TO-220-3 Fullpack/TO-220F-3SG Paket / Fall TO-220-3 Full Pack |
