AUIRF7303Q Datenblatt
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Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5.3A Rds On (Max) @ Id, Vgs 50mOhm @ 2.7A, 10V Vgs (th) (Max) @ Id 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 515pF @ 25V Leistung - max 2.4W Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
Hersteller Infineon Technologies Serie HEXFET® FET-Typ 2 N-Channel (Dual) FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 5.3A Rds On (Max) @ Id, Vgs 50mOhm @ 2.7A, 10V Vgs (th) (Max) @ Id 3V @ 100µA Gate Charge (Qg) (Max) @ Vgs 21nC @ 10V Eingangskapazität (Ciss) (Max) @ Vds 515pF @ 25V Leistung - max 2.4W Betriebstemperatur -55°C ~ 175°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SO |
