AON7403L_001 Datenblatt
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Hersteller Alpha & Omega Semiconductor Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 11A (Ta), 29A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 15V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 1400pF @ 15V FET-Funktion - Verlustleistung (max.) 4.1W (Ta), 25W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-DFN (3x3) Paket / Fall 8-PowerVDFN |
Hersteller Alpha & Omega Semiconductor Inc. Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 11A (Ta), 29A (Tc) Antriebsspannung (Max Rds On, Min Rds On) 5V, 10V Rds On (Max) @ Id, Vgs 18mOhm @ 8A, 10V Vgs (th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 24nC @ 15V Vgs (Max) ±25V Eingangskapazität (Ciss) (Max) @ Vds 1400pF @ 15V FET-Funktion - Verlustleistung (max.) 3.1W (Ta), 25W (Tc) Betriebstemperatur -55°C ~ 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket 8-DFN (3x3) Paket / Fall 8-PowerVDFN |
