ALD212902PAL Datenblatt
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Hersteller Advanced Linear Devices Inc. Serie EPAD®, Zero Threshold™ FET-Typ 2 N-Channel (Dual) Matched Pair FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 80mA Rds On (Max) @ Id, Vgs - Vgs (th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max 500mW Betriebstemperatur 0°C ~ 70°C (TJ) Montagetyp Through Hole Paket / Fall 8-DIP (0.300", 7.62mm) Lieferantengerätepaket 8-PDIP |
Hersteller Advanced Linear Devices Inc. Serie EPAD®, Zero Threshold™ FET-Typ 2 N-Channel (Dual) Matched Pair FET-Funktion Logic Level Gate Drain to Source Voltage (Vdss) 10.6V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 80mA Rds On (Max) @ Id, Vgs - Vgs (th) (Max) @ Id 20mV @ 10µA Gate Charge (Qg) (Max) @ Vgs - Eingangskapazität (Ciss) (Max) @ Vds - Leistung - max 500mW Betriebstemperatur 0°C ~ 70°C (TJ) Montagetyp Surface Mount Paket / Fall 8-SOIC (0.154", 3.90mm Width) Lieferantengerätepaket 8-SOIC |
