2SJ360(TE12L Datenblatt
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Hersteller Toshiba Semiconductor and Storage Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 1A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 730mOhm @ 500mA, 10V Vgs (th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 155pF @ 10V FET-Funktion - Verlustleistung (max.) 500mW (Ta) Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket PW-MINI Paket / Fall TO-243AA |
Hersteller Toshiba Semiconductor and Storage Serie - FET-Typ P-Channel Technologie MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. 1A (Ta) Antriebsspannung (Max Rds On, Min Rds On) 4V, 10V Rds On (Max) @ Id, Vgs 730mOhm @ 500mA, 10V Vgs (th) (Max) @ Id 2V @ 1mA Gate Charge (Qg) (Max) @ Vgs 6.5nC @ 10V Vgs (Max) ±20V Eingangskapazität (Ciss) (Max) @ Vds 155pF @ 10V FET-Funktion - Verlustleistung (max.) 500mW (Ta) Betriebstemperatur 150°C (TJ) Montagetyp Surface Mount Lieferantengerätepaket PW-MINI Paket / Fall TO-243AA |
