16TTS12 Datenblatt
Vishay Semiconductor Diodes Division Hersteller Vishay Semiconductor Diodes Division Serie - Spannung - Aus Zustand 1.2kV Spannung - Gate-Trigger (Vgt) (max.) 2V Current - Gate Trigger (Igt) (Max) 60mA Spannung - Ein-Zustand (Vtm) (max.) 1.4V Aktueller Ein-Zustand (It (AV)) (Max) 10A Current - On State (It (RMS)) (max.) 16A Current - Hold (Ih) (Max) 100mA Current - Off State (Max) 500µA Current - Non Rep. Surge 50, 60Hz (Itsm) 200A @ 50Hz SCR-Typ Standard Recovery Betriebstemperatur -40°C ~ 125°C Montagetyp Through Hole Paket / Fall TO-220-3 Lieferantengerätepaket TO-220AB |
Vishay Semiconductor Diodes Division Hersteller Vishay Semiconductor Diodes Division Serie - Spannung - Aus Zustand 800V Spannung - Gate-Trigger (Vgt) (max.) 2V Current - Gate Trigger (Igt) (Max) 60mA Spannung - Ein-Zustand (Vtm) (max.) 1.4V Aktueller Ein-Zustand (It (AV)) (Max) 10A Current - On State (It (RMS)) (max.) 16A Current - Hold (Ih) (Max) 100mA Current - Off State (Max) 500µA Current - Non Rep. Surge 50, 60Hz (Itsm) 200A @ 50Hz SCR-Typ Standard Recovery Betriebstemperatur -40°C ~ 125°C Montagetyp Through Hole Paket / Fall TO-220-3 Lieferantengerätepaket TO-220AB |