Central Semiconductor Corp Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerCentral Semiconductor Corp
Datensätze 473
Seite 8/16
Bild |
Teilenummer |
Hersteller |
Beschreibung |
Auf Lager |
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 5A SMC |
4.788 |
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- | Standard | 200V | 5A | 1.7V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 22ns | 1µA @ 600V | 17pF @ 4V, 1MHz | Surface Mount | DO-214AB, SMC | SMC | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 50MA DO7 |
7.362 |
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- | Standard | 75V | 50mA | 1V @ 5mA | Small Signal =< 200mA (Io), Any Speed | - | 500µA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -55°C ~ 75°C |
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Central Semiconductor Corp |
DIODE GEN PURP 20V 50MA TO18 |
3.420 |
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- | Standard | 20V | 50mA | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 600ns | 5pA @ 5V | 1.3pF @ 0V, 1MHz | Through Hole | TO-18-2 | TO-18 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
4.752 |
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- | Standard | 400V | 1A | 1.1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 150MA DO35 |
3.132 |
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- | Standard | 100V | 150mA | 720mV @ 5mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 20V 1A DIE 1=400 |
6.588 |
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- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 250MA SOD123 |
6.732 |
|
- | Standard | 50V | 250mA | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 4pF @ 0V, 1MHz | Surface Mount | SOD-123 | SOD-123 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 250MA SOT23 |
5.555 |
|
- | Standard | 50V | 250mA | 1V @ 200mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 100nA @ 50V | 4pF @ 0V, 1MHz | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 2A SMB |
2.862 |
|
- | Schottky | 40V | 2A | 400mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 150pF @ 4V, 1MHz | Surface Mount | DO-214AA, SMB | SMB | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 1A DO41 |
6.516 |
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- | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
4.680 |
|
- | Standard | 800V | 1A | 1.7V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GPP ULT FAST 1A CHIP 1=400 |
3.996 |
|
- | Standard | 600V | 1A | 1.4V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DIE 1=400 |
3.636 |
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- | Standard | 600V | 1A | 1.3V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP GPP 1A CHIP FORM 1=400 |
2.844 |
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- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GP 100V 200MA DIE 1=400 |
4.032 |
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- | Standard | 100V | 200mA (DC) | 1V @ 10mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | Die | Die | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 650V 10A DPAK |
7.632 |
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- | Schottky | 650V | 10A | 1.7V @ 10A | Fast Recovery =< 500ns, > 200mA (Io) | - | 125µA @ 650V | 28pF @ 600V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 650V 10A DPAK |
3.780 |
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- | Silicon Carbide Schottky | 650V | 10A (DC) | 1.7V @ 10A | No Recovery Time > 500mA (Io) | 0ns | 125µA @ 650V | 325pF @ 1V, 1MHz | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | -55°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 150MA DO35 |
7.740 |
|
- | Standard | 100V | 150mA | 1V @ 20mA | Small Signal =< 200mA (Io), Any Speed | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Through Hole | DO-204AH, DO-35, Axial | DO-35 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
3.276 |
|
- | Standard | 400V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 400V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
6.822 |
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- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
6.894 |
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- | Standard | 600V | 1A | 1.2V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 200ns | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | - |
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Central Semiconductor Corp |
DIODE SCHOTTKY 20V 1A DO41 |
6.804 |
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- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 20V 1A DO41 |
2.898 |
|
- | Schottky | 20V | 1A | 450mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 20V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 30V 1A DO41 |
5.130 |
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- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 30V 1A DO41 |
6.408 |
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- | Schottky | 30V | 1A | 550mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 30V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 1A DO41 |
4.608 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY 40V 1A DO41 |
8.298 |
|
- | Schottky | 40V | 1A | 600mV @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | - | 1mA @ 40V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 300MA SOD80 |
4.086 |
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- | Standard | 50V | 300mA (DC) | 1V @ 200mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 100nA @ 50V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOD80 |
6.066 |
|
- | Standard | 75V | 250mA (DC) | 1V @ 10mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 5µA @ 75V | 4pF @ 0V, 1MHz | Surface Mount | DO-213AC, MINI-MELF, SOD-80 | SOD-80 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 75V 250MA SOD323 |
4.500 |
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- | Standard | 75V | 250mA (DC) | 1V @ 100mA | Fast Recovery =< 500ns, > 200mA (Io) | 4ns | 25nA @ 20V | 4pF @ 0V, 1MHz | Surface Mount | SC-76, SOD-323 | SOD-323 | -65°C ~ 175°C |