Central Semiconductor Corp Gleichrichter - Single
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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerCentral Semiconductor Corp
Datensätze 473
Seite 13/16
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Serie | Diodentyp | Spannung - DC-Rückwärtsgang (Vr) (max.) | Current - Average Rectified (Io) | Spannung - Vorwärts (Vf) (Max) @ If | Geschwindigkeit | Reverse Recovery Time (trr) | Strom - Umkehrleckage @ Vr | Kapazität @ Vr, F. | Montagetyp | Paket / Fall | Lieferantengerätepaket | Betriebstemperatur - Verbindungsstelle |
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Central Semiconductor Corp |
DIODE SCHOTTKY DO15 |
5.094 |
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- | Schottky | 20V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 20V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY DO15 |
4.374 |
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- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY DO15 |
3.508 |
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- | Schottky | 40V | 2A | 500mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 40V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE SCHOTTKY DO15 |
5.454 |
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- | Schottky | 50V | 2A | 700mV @ 2A | Fast Recovery =< 500ns, > 200mA (Io) | - | 500µA @ 50V | 170pF @ 4V, 1MHz | Through Hole | DO-204AC, DO-15, Axial | DO-15 | -65°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURPOSE DO41 |
4.176 |
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- | Standard | 50V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 50V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURPOSE DO41 |
2.322 |
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- | Standard | 100V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 100V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURPOSE DO41 |
3.708 |
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- | - | - | - | - | - | - | - | - | - | - | - | - |
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Central Semiconductor Corp |
DIODE GEN PURPOSE DO41 |
6.570 |
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- | Standard | 600V | 1A | 1.1V @ 1A | Standard Recovery >500ns, > 200mA (Io) | - | 5µA @ 600V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 175°C |
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Central Semiconductor Corp |
DIODE GEN PURP 80V 200MA DO41 |
6.066 |
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- | Standard | 80V | 200mA | 1.1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | 9ns | 100nA @ 80V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 1A DO41 |
8.730 |
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- | Standard | 50V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 50V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 1A DO41 |
4.284 |
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- | Standard | 100V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 100V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 1A DO41 |
8.118 |
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- | Standard | 200V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 200V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 1A DO41 |
2.322 |
|
- | Standard | 400V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 50ns | 10µA @ 400V | 20pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 1A DO41 |
2.394 |
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- | Standard | 600V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 600V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 1A DO41 |
4.554 |
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- | Standard | 800V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 800V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 1000V 1A DO41 |
7.326 |
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- | Standard | 1000V | 1A | 1V @ 1A | Fast Recovery =< 500ns, > 200mA (Io) | 75ns | 10µA @ 1000V | 10pF @ 4V, 1MHz | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 50V 40MA DO7 |
2.016 |
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- | Standard | 50V | 40mA (DC) | 1V @ 40mA | Small Signal =< 200mA (Io), Any Speed | 300ns | 100µA @ 50V | - | Through Hole | DO-204AA, DO-7, Axial | DO-7 | -65°C ~ 100°C |
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Central Semiconductor Corp |
DIODE GP 200V 200MA DO204AL |
3.834 |
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- | Standard | 200V | 200mA | 1V @ 100mA | Small Signal =< 200mA (Io), Any Speed | - | 25nA @ 200V | - | Through Hole | DO-204AL, DO-41, Axial | DO-204AL (DO-41) | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 250V 200MA DO41 |
7.128 |
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- | Standard | 250V | 200mA | 1V @ 100mA | - | - | 50nA @ 250V | - | Through Hole | DO-204AL, DO-41, Axial | DO-41 | -65°C ~ 200°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 3A DO201AD |
2.088 |
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- | Standard | 100V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 3A DO201AD |
2.628 |
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- | Standard | 200V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 3A DO201AD |
2.538 |
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- | Standard | 400V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | 65pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 3A DO201AD |
3.492 |
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- | Standard | 600V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 600V 3A DO201AD |
4.968 |
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- | Standard | 600V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 250ns | 5µA @ 600V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 3A DO201AD |
7.632 |
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- | Standard | 800V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 1KV 3A DO201AD |
8.046 |
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- | Standard | 1000V | 3A | 1.2V @ 3A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 1000V | 40pF @ 4V, 1MHz | Through Hole | DO-201AD, Axial | DO-201AD | -55°C ~ 125°C |
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Central Semiconductor Corp |
DIODE GEN PURP 100V 5A DO201AD |
3.096 |
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- | Standard | 100V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 100V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 200V 5A DO201AD |
7.650 |
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- | Standard | 200V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 200V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 400V 5A DO201AD |
6.426 |
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- | Standard | 400V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 150ns | 5µA @ 400V | - | Through Hole | DO-201AD, Axial | DO-201AD | -65°C ~ 150°C |
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Central Semiconductor Corp |
DIODE GEN PURP 800V 5A DO201AD |
6.534 |
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- | Standard | 800V | 5A | 1.3V @ 5A | Fast Recovery =< 500ns, > 200mA (Io) | 500ns | 5µA @ 800V | - | Through Hole | DO-201AD, Axial | DO-201 | -65°C ~ 150°C |