Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 85/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 800V 2.1A TO220FP |
3.726 |
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- | N-Channel | MOSFET (Metal Oxide) | 800V | 2.1A (Tc) | 10V | 3Ohm @ 1.3A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1300pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 900V 1.2A TO220FP |
7.182 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.2A (Tc) | 10V | 8Ohm @ 720mA, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 490pF @ 25V | - | 30W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 900V 1.9A TO220FP |
7.254 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 1.9A (Tc) | 10V | 3.7Ohm @ 1.1A, 10V | 4V @ 250µA | 78nC @ 10V | ±20V | 1200pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 8A TO220FP |
2.466 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 8A (Tc) | 10V | 200mOhm @ 4.8A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 27W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 14A TO220FP |
2.862 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 100mOhm @ 8.4A, 10V | 4V @ 250µA | 25nC @ 10V | ±20V | 640pF @ 25V | - | 37W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 20A TO220FP |
3.600 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 20A (Tc) | 10V | 50mOhm @ 12A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1200pF @ 25V | - | 42W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 2.7A SOT223 |
8.802 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2.7A (Tc) | 10V | 200mOhm @ 1.6A, 10V | 4V @ 250µA | 11nC @ 10V | ±20V | 300pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
3.096 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 100V 1.5A SOT223 |
8.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 1.5A (Tc) | 10V | 540mOhm @ 900mA, 10V | 4V @ 250µA | 8.3nC @ 10V | ±20V | 180pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223 |
7.650 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 200V 0.96A SOT223 |
4.086 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 960mA (Tc) | 10V | 1.5Ohm @ 580mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 250V 790MA SOT223 |
5.130 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 790mA (Tc) | 10V | 2Ohm @ 470mA, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
3.258 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 60V 1.8A SOT223 |
2.880 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 1.8A (Tc) | 10V | 500mOhm @ 1.1A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
5.472 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET P-CH 100V 1.1A SOT223 |
7.560 |
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- | P-Channel | MOSFET (Metal Oxide) | 100V | 1.1A (Tc) | 10V | 1.2Ohm @ 660mA, 10V | 4V @ 250µA | 8.7nC @ 10V | ±20V | 200pF @ 25V | - | 2W (Ta), 3.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
3.528 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 14mOhm @ 54A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 4500pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 60V 70A TO-247AC |
4.860 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 70A (Tc) | 10V | 9mOhm @ 78A, 10V | 4V @ 250µA | 190nC @ 10V | ±20V | 7400pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 100V 41A TO-247AC |
3.888 |
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- | N-Channel | MOSFET (Metal Oxide) | 100V | 41A (Tc) | 10V | 55mOhm @ 25A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2800pF @ 25V | - | 230W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 22A TO-247AC |
6.840 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 22A (Tc) | 10V | 230mOhm @ 13A, 10V | 4V @ 250µA | 120nC @ 10V | ±30V | 3450pF @ 25V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 250V 23A TO-247AC |
4.608 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 23A (Tc) | 10V | 140mOhm @ 14A, 10V | 4V @ 250µA | 140nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 450V 14A TO-247AC |
7.146 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 14A (Tc) | 10V | 350mOhm @ 8.4A, 10V | 4V @ 250µA | 160nC @ 10V | ±20V | 2700pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 400V 23A TO-247AC |
7.308 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 23A (Tc) | 10V | 200mOhm @ 14A, 10V | 4V @ 250µA | 110nC @ 10V | ±30V | 3400pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 11A TO-247AC |
2.844 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 11A (Tc) | 10V | 600mOhm @ 6.6A, 10V | 4V @ 250µA | 84nC @ 10V | ±20V | 1900pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 14A TO-247AC |
4.986 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 14A (Tc) | 10V | 400mOhm @ 8.4A, 10V | 4V @ 250µA | 64nC @ 10V | ±30V | 2038pF @ 25V | - | 190W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 500V 20A TO-247AC |
7.200 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 20A (Tc) | 10V | 270mOhm @ 12A, 10V | 4V @ 250µA | 105nC @ 10V | ±30V | 3100pF @ 25V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 6.8A TO-247AC |
3.186 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 6.8A (Tc) | 10V | 1.2Ohm @ 4.1A, 10V | 4V @ 250µA | 60nC @ 10V | ±20V | 1300pF @ 25V | - | 150W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 8.9A TO-247AC |
4.626 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 8.9A (Tc) | 10V | 820mOhm @ 5.3A, 10V | 4V @ 250µA | 110nC @ 10V | ±20V | 1800pF @ 25V | - | 170W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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Vishay Siliconix |
MOSFET N-CH 600V 11A TO-247AC |
5.670 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 11A (Tc) | 10V | 580mOhm @ 6A, 10V | 4V @ 250µA | 70nC @ 10V | ±30V | 2100pF @ 25V | - | 180W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |