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Vishay Siliconix Transistoren - FETs, MOSFETs - Single

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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 78/132
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
FET-Typ
Technologie
Drain to Source Voltage (Vdss)
Strom - Kontinuierliche Entleerung (Id) bei 25 ° C.
Antriebsspannung (Max Rds On, Min Rds On)
Rds On (Max) @ Id, Vgs
Vgs (th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Vgs (Max)
Eingangskapazität (Ciss) (Max) @ Vds
FET-Funktion
Verlustleistung (max.)
Betriebstemperatur
Montagetyp
Lieferantengerätepaket
Paket / Fall
IRFI820G
Vishay Siliconix
MOSFET N-CH 500V 2.1A TO220FP
7.992
-
N-Channel
MOSFET (Metal Oxide)
500V
2.1A (Tc)
10V
3Ohm @ 1.3A, 10V
4V @ 250µA
24nC @ 10V
±20V
360pF @ 25V
-
30W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
SIHG22N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 22A TO-247AC
6.120
-
N-Channel
MOSFET (Metal Oxide)
650V
22A (Tc)
10V
180mOhm @ 11A, 10V
4V @ 250µA
110nC @ 10V
±30V
2415pF @ 100V
-
227W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG32N50D-E3
Vishay Siliconix
MOSFET N-CH 500V 30A TO-247AC
6.120
-
N-Channel
MOSFET (Metal Oxide)
500V
30A (Tc)
10V
150mOhm @ 16A, 10V
5V @ 250µA
96nC @ 10V
±30V
2550pF @ 100V
-
390W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHH21N65E-T1-GE3
Vishay Siliconix
MOSFET N-CH 650V 20.3A PWRPAK8X8
8.028
-
N-Channel
MOSFET (Metal Oxide)
650V
20.3A (Tc)
10V
170mOhm @ 11A, 10V
4V @ 250µA
99nC @ 10V
±30V
2404pF @ 100V
-
156W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
IRFI830G
Vishay Siliconix
MOSFET N-CH 500V 3.1A TO220FP
8.190
-
N-Channel
MOSFET (Metal Oxide)
500V
3.1A (Tc)
10V
1.5Ohm @ 1.9A, 10V
4V @ 250µA
38nC @ 10V
±20V
610pF @ 25V
-
35W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
SIHF16N50C-E3
Vishay Siliconix
MOSFET N-CH 500V 16A TO-220
8.694
-
N-Channel
MOSFET (Metal Oxide)
500V
16A (Tc)
10V
380mOhm @ 8A, 10V
5V @ 250µA
68nC @ 10V
±30V
1900pF @ 25V
-
38W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220 Full Pack
TO-220-3 Full Pack
IRFP344
Vishay Siliconix
MOSFET N-CH 450V 9.5A TO-247AC
5.112
-
N-Channel
MOSFET (Metal Oxide)
450V
9.5A (Tc)
10V
630mOhm @ 5.7A, 10V
4V @ 250µA
80nC @ 10V
±20V
1400pF @ 25V
-
150W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIHB24N65ET1-GE3
Vishay Siliconix
MOSFET N-CH 650V 24A TO263
6.570
E
N-Channel
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
145mOhm @ 12A, 10V
4V @ 250µA
122nC @ 10V
±30V
2740pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D²Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHB24N65ET5-GE3
Vishay Siliconix
MOSFET N-CH 650V 24A TO263
6.048
E
N-Channel
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
145mOhm @ 12A, 10V
4V @ 250µA
122nC @ 10V
±30V
2740pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D²Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
IRF840LC
Vishay Siliconix
MOSFET N-CH 500V 8A TO-220AB
2.160
-
N-Channel
MOSFET (Metal Oxide)
500V
8A (Tc)
10V
850mOhm @ 4.8A, 10V
4V @ 250µA
39nC @ 10V
±30V
1100pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG24N65E-E3
Vishay Siliconix
MOSFET N-CH 650V 24A TO247AC
6.714
-
N-Channel
MOSFET (Metal Oxide)
650V
24A (Tc)
10V
145mOhm @ 12A, 10V
4V @ 250µA
122nC @ 10V
±30V
2740pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHB33N60ET5-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A TO263
6.048
E
N-Channel
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150nC @ 10V
±30V
3508pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
TO-263 (D²Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
SIHP38N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V TO-220AB
3.960
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
IRFPC50LCPBF
Vishay Siliconix
MOSFET N-CH 600V 11A TO-247AC
4.248
-
N-Channel
MOSFET (Metal Oxide)
600V
11A (Tc)
10V
600mOhm @ 6.6A, 10V
4V @ 250µA
84nC @ 10V
±30V
2300pF @ 25V
-
190W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRFPC60PBF
Vishay Siliconix
MOSFET N-CH 600V 16A TO-247AC
7.164
-
N-Channel
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
400mOhm @ 9.6A, 10V
4V @ 250µA
210nC @ 10V
±20V
3900pF @ 25V
-
280W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
SIHG33N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 33A TO247AC
5.652
E
N-Channel
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
99mOhm @ 16.5A, 10V
4V @ 250µA
150nC @ 10V
±30V
3508pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHH24N65EF-T1-GE3
Vishay Siliconix
MOSFET N-CHAN 650V 23A POWERPAK
6.498
-
N-Channel
MOSFET (Metal Oxide)
650V
23A (Tc)
10V
158mOhm @ 12A, 10V
4V @ 250µA
17nC @ 10V
±30V
2780pF @ 100V
-
202W (Tc)
-55°C ~ 150°C (TJ)
Surface Mount
PowerPAK® 8 x 8
8-PowerTDFN
SIHG28N65EF-GE3
Vishay Siliconix
MOSFET N-CH 650V 28A TO-247AC
5.832
-
N-Channel
MOSFET (Metal Oxide)
650V
28A (Tc)
10V
117mOhm @ 14A, 10V
4V @ 250µA
146nC @ 10V
±30V
3249pF @ 100V
-
250W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG33N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 33A TO-247AC
6.120
-
N-Channel
MOSFET (Metal Oxide)
600V
33A (Tc)
10V
98mOhm @ 16.5A, 10V
4V @ 250µA
155nC @ 10V
±30V
3454pF @ 100V
-
278W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
IRFBF30
Vishay Siliconix
MOSFET N-CH 900V 3.6A TO-220AB
7.614
-
N-Channel
MOSFET (Metal Oxide)
900V
3.6A (Tc)
10V
3.7Ohm @ 2.2A, 10V
4V @ 250µA
78nC @ 10V
±20V
1200pF @ 25V
-
125W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
IRFIBC40G
Vishay Siliconix
MOSFET N-CH 600V 3.5A TO220FP
4.914
-
N-Channel
MOSFET (Metal Oxide)
600V
3.5A (Tc)
10V
1.2Ohm @ 2.1A, 10V
4V @ 250µA
60nC @ 10V
±20V
1300pF @ 25V
-
40W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
TO-220-3 Full Pack, Isolated Tab
SIHS20N50C-E3
Vishay Siliconix
MOSFET N-CH 500V 20A TO-247AD
7.290
-
N-Channel
MOSFET (Metal Oxide)
500V
20A (Tc)
10V
270mOhm @ 10A, 10V
5V @ 250µA
76nC @ 10V
±30V
2942pF @ 25V
-
250mW (Tc)
-55°C ~ 150°C (TJ)
Through Hole
SUPER-247™ (TO-274AA)
TO-274AA
SIHG47N60AEF-GE3
Vishay Siliconix
MOSFET N-CH 600V TO-247AC
7.236
*
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
SIHW47N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 47A TO-247AD
3.204
-
N-Channel
MOSFET (Metal Oxide)
600V
47A (Tc)
10V
65mOhm @ 24A, 10V
4V @ 250µA
225nC @ 10V
±30V
4854pF @ 100V
-
379W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
SIHW73N60E-GE3
Vishay Siliconix
MOSFET N-CH 600V 73A TO-247AD
2.268
-
N-Channel
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
39mOhm @ 36A, 10V
4V @ 250µA
362nC @ 10V
±20V
7700pF @ 100V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AD
TO-247-3
IRFB18N50K
Vishay Siliconix
MOSFET N-CH 500V 17A TO-220AB
5.148
-
N-Channel
MOSFET (Metal Oxide)
500V
17A (Tc)
10V
290mOhm @ 10A, 10V
5V @ 250µA
120nC @ 10V
±30V
2830pF @ 25V
-
220W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-220AB
TO-220-3
SIHG73N60E-E3
Vishay Siliconix
MOSFET N-CH 600V 73A TO247AC
6.300
-
N-Channel
MOSFET (Metal Oxide)
600V
73A (Tc)
10V
39mOhm @ 36A, 10V
4V @ 250µA
362nC @ 10V
±30V
7700pF @ 100V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
SIHG64N65E-GE3
Vishay Siliconix
MOSFET N-CH 650V 64A TO247AC
7.578
-
N-Channel
MOSFET (Metal Oxide)
650V
64A (Tc)
10V
47mOhm @ 32A, 10V
4V @ 250µA
369nC @ 10V
±30V
7497pF @ 100V
-
520W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247AC
TO-247-3
IRFPF50
Vishay Siliconix
MOSFET N-CH 900V 6.7A TO-247AC
8.046
-
N-Channel
MOSFET (Metal Oxide)
900V
6.7A (Tc)
10V
1.6Ohm @ 4A, 10V
4V @ 250µA
200nC @ 10V
±20V
2900pF @ 25V
-
190W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3
IRFPC60
Vishay Siliconix
MOSFET N-CH 600V 16A TO-247AC
6.030
-
N-Channel
MOSFET (Metal Oxide)
600V
16A (Tc)
10V
400mOhm @ 9.6A, 10V
4V @ 250µA
210nC @ 10V
±20V
3900pF @ 25V
-
280W (Tc)
-55°C ~ 150°C (TJ)
Through Hole
TO-247-3
TO-247-3