Vishay Siliconix Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerVishay Siliconix
Datensätze 3.936
Seite 71/132
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Vishay Siliconix |
MOSFET N-CH 650V 7A TO252AA |
8.640 |
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E | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 40V 100A POWERPAKSO |
7.632 |
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TrenchFET® Gen IV | N-Channel | MOSFET (Metal Oxide) | 40V | 100A (Tc) | 4.5V, 10V | 0.88mOhm @ 20A, 10V | 2.3V @ 250µA | 204nC @ 10V | +20V, -16V | 10500pF @ 20V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 34.4A SO-8 |
4.950 |
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ThunderFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 34.4A (Tc) | 7.5V, 10V | 35mOhm @ 20A, 10V | 4V @ 250µA | 48nC @ 10V | ±20V | 1935pF @ 100V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V D2PAK TO-263 |
4.680 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 500V 2.4A DPAK |
7.830 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.4A (Tc) | 10V | 3Ohm @ 1.4A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 360pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CHANNEL 250V |
3.762 |
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- | - | - | - | - | - | - | - | - | - | - | - | - | - | Surface Mount | D²PAK (TO-263) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET P-CH 200V D2PAK TO-263 |
6.372 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 100V D2PAK TO-263 |
2.322 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 60V 14A DPAK |
7.614 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 4V, 5V | 100mOhm @ 8.4A, 5V | 2V @ 250µA | 18nC @ 5V | ±10V | 870pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 8.7A D2PAK |
7.218 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263 (D²Pak) | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 60V D2PAK TO-263 |
3.544 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Vishay Siliconix |
MOSFET N-CH 650V 6A IPAK |
6.642 |
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- | N-Channel | MOSFET (Metal Oxide) | 650V | 7A (Tc) | 10V | 600mOhm @ 3A, 10V | 4V @ 250µA | 48nC @ 10V | ±30V | 820pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | IPAK (TO-251) | TO-251-3 Long Leads, IPak, TO-251AB |
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Vishay Siliconix |
MOSFET N-CH 500V 8.7A TO220AB |
3.546 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 8.7A (Tc) | 10V | 850mOhm @ 4A, 10V | 5V @ 250µA | 30nC @ 10V | ±30V | 527pF @ 100V | - | 156W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Vishay Siliconix |
MOSFET N-CH 30V 100A POWERPAKSO |
3.078 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 100A (Tc) | 4.5V, 10V | 1mOhm @ 20A, 10V | 2.2V @ 250µA | 220nC @ 10V | +20V, -16V | 11700pF @ 15V | - | 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 30V 50A PPAK SO-8 |
6.498 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 4.5V, 10V | 2mOhm @ 15A, 10V | 2.2V @ 250µA | 117nC @ 10V | +20V, -16V | 6150pF @ 15V | - | 5W (Ta), 71.4W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA |
6.678 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO252AA |
2.772 |
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E | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252AA | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 400V 3.1A DPAK |
2.196 |
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- | N-Channel | MOSFET (Metal Oxide) | 400V | 3.1A (Tc) | 10V | 1.8Ohm @ 1.9A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 350pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 30V 8-SOIC |
3.978 |
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- | P-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Vishay Siliconix |
MOSFET N-CH 30V 45A POLARPAK |
7.110 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 45A (Tc) | 4.5V, 10V | 5.6mOhm @ 20A, 10V | 2V @ 250µA | 38nC @ 10V | ±20V | 1510pF @ 15V | - | 5.2W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 10-PolarPAK® (U) | 10-PolarPAK® (U) |
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Vishay Siliconix |
MOSFET N-CH 600V 7A TO-251 |
4.788 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 7A (Tc) | 10V | 600mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | ±30V | 680pF @ 100V | - | 78W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Vishay Siliconix |
MOSFET N-CH 30V 60A PPAK SO-8 |
7.722 |
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SkyFET®, TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 60A (Tc) | 4.5V, 10V | 3.5mOhm @ 20A, 10V | 2.7V @ 250µA | 115nC @ 10V | ±20V | 5300pF @ 15V | - | 5.4W (Ta), 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET N-CH 200V 3.3A TO-262 |
4.518 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 3.3A (Tc) | 10V | 1.5Ohm @ 2A, 10V | 4V @ 250µA | 8.2nC @ 10V | ±20V | 140pF @ 25V | - | 3W (Ta), 36W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 100V 60A POWERPAKSO |
6.642 |
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TrenchFET® | N-Channel | MOSFET (Metal Oxide) | 100V | 60A (Tc) | 6V, 10V | 7.8mOhm @ 20A, 10V | 3V @ 250µA | 66nC @ 10V | ±20V | 2350pF @ 50V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 |
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Vishay Siliconix |
MOSFET P-CH 60V 6.7A TO-262 |
2.358 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 6.7A (Tc) | 10V | 500mOhm @ 4A, 10V | 4V @ 250µA | 12nC @ 10V | ±20V | 270pF @ 25V | - | 3.7W (Ta), 43W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 600V 3.6A TO-262 |
6.498 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 3.6A (Tc) | 10V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250µA | 23nC @ 10V | ±30V | 510pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 5A DPAK |
3.492 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Tc) | 10V | 1.7Ohm @ 3A, 10V | 4.5V @ 250µA | 24nC @ 10V | ±30V | 490pF @ 25V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 50V 9.9A DPAK |
8.226 |
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- | P-Channel | MOSFET (Metal Oxide) | 50V | 9.9A (Tc) | 10V | 280mOhm @ 5.7A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 490pF @ 25V | - | 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET P-CH 60V 8.8A DPAK |
7.488 |
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- | P-Channel | MOSFET (Metal Oxide) | 60V | 8.8A (Tc) | 10V | 280mOhm @ 5.3A, 10V | 4V @ 250µA | 19nC @ 10V | ±20V | 570pF @ 25V | - | 2.5W (Ta), 42W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Vishay Siliconix |
MOSFET N-CH 500V 2.5A TO-262 |
8.676 |
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- | N-Channel | MOSFET (Metal Oxide) | 500V | 2.5A (Tc) | 10V | 3Ohm @ 1.5A, 10V | 4V @ 250µA | 24nC @ 10V | ±20V | 360pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I2PAK | TO-262-3 Long Leads, I²Pak, TO-262AA |