Toshiba Semiconductor and Storage Transistoren - IGBTs - Single
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KategorieHalbleiter / Transistoren / Transistoren - IGBTs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 5
Seite 1/1
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Beschreibung |
Auf Lager |
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Serie | IGBT-Typ | Spannung - Kollektor-Emitter-Durchschlag (max.) | Strom - Kollektor (Ic) (max.) | Strom - Kollektor gepulst (Icm) | Vce (on) (Max) @ Vge, Ic | Leistung - max | Schaltenergie | Eingabetyp | Gate Charge | Td (ein / aus) bei 25 ° C. | Testbedingung | Reverse Recovery Time (trr) | Betriebstemperatur | Montagetyp | Paket / Fall | Lieferantengerätepaket |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Toshiba Semiconductor and Storage |
IGBT 400V 1W 8-SOIC |
6.030 |
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- | - | 400V | - | 200A | 2.3V @ 4V, 200A | 1W | - | Standard | - | 3.1µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-SOIC (0.173", 4.40mm Width) | 8-SOP (5.5x6.0) |
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Toshiba Semiconductor and Storage |
IGBT 600V 10A 60W TO220SM |
7.830 |
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- | - | 600V | 10A | 20A | 2.7V @ 15V, 10A | 60W | - | Standard | - | 400ns/400ns | 300V, 10A, 100Ohm, 15V | 200ns | 150°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-220SM |
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Toshiba Semiconductor and Storage |
IGBT 1000V 60A 170W TO3P LH |
7.254 |
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- | - | 1000V | 60A | 120A | 2.8V @ 15V, 60A | 170W | - | Standard | - | 330ns/700ns | - | 2.5µs | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |
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Toshiba Semiconductor and Storage |
IGBT 400V 600MW 8TSSOP |
4.896 |
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- | - | 400V | - | 150A | 2.9V @ 4V, 150A | 600mW | - | Standard | - | 1.7µs/2µs | - | - | 150°C (TJ) | Surface Mount | 8-TSSOP (0.173", 4.40mm Width) | 8-TSSOP |
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Toshiba Semiconductor and Storage |
IGBT 600V 50A 240W TO3P LH |
2.448 |
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- | - | 600V | 50A | 100A | 2.45V @ 15V, 50A | 240W | 1.3mJ (on), 1.34mJ (off) | Standard | - | 90ns/300ns | 300V, 50A, 13Ohm, 15V | - | 150°C (TJ) | Through Hole | TO-3PL | TO-3P(LH) |