Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 2/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 50V 0.1A USM |
625.428 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 50V | 100mA (Ta) | 2.5V, 4V | 20Ohm @ 10mA, 4V | 1.5V @ 1µA | - | ±7V | 7pF @ 3V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 1.4A CST3 |
214.116 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 1.4A (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | CST3 | SC-101, SOT-883 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 6A SOT23F |
209.424 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 3.9A (Ta) | 1.5V, 4.5V | 93mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | ±8V | 290pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 50MA S-MINI |
213.594 |
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- | N-Channel | MOSFET (Metal Oxide) | 20V | 50mA (Ta) | 2.5V | 40Ohm @ 10mA, 2.5V | 1.5V @ 100µA | - | 10V | 5.5pF @ 3V | - | 200mW (Ta) | 150°C (TJ) | Surface Mount | SC-59 | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 0.8A VESM |
1.150.926 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.2V, 4.5V | 390mOhm @ 800mA, 4.5V | - | - | ±8V | 100pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 20V 0.8A VESM |
72.282 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 800mA (Ta) | 1.5V, 4.5V | 235mOhm @ 800mA, 4.5V | 1V @ 1mA | 1nC @ 4.5V | ±8V | 55pF @ 10V | - | 150mW (Ta) | 150°C (TJ) | Surface Mount | VESM | SOT-723 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 2A S-MINI |
28.578 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 2A (Ta) | 1.5V, 4.5V | 150mOhm @ 1A, 4.5V | - | 4.6nC @ 4.5V | ±8V | 270pF @ 10V | - | 600mW (Ta) | 150°C (TJ) | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
SMALL LOW RON NCH MOSFETS ID: 4A |
24.666 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | 56mOhm @ 2A, 4.5V | 1V @ 1mA | 2.2nC @ 4.5V | +12V, -8V | 200pF @ 10V | - | 2W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 2A SOT-23F |
780.042 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 2A (Ta) | 1.8V, 8V | 185mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 30V 4A SOT-23F |
88.086 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4V, 10V | 71mOhm @ 3A, 10V | 2V @ 100µA | 5.9nC @ 10V | ±20V | 280pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 4A SOT-23F |
76.254 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 1.8V, 4.5V | 55mOhm @ 4A, 4.5V | - | - | ±12V | 190pF @ 30V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 20V 4A SOT-23F |
29.940 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 4A (Ta) | 1.5V, 4.5V | 55mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | ±8V | 630pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
92.052 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 4.5V | 30.1mOhm @ 4A, 4.5V | 1V @ 1mA | 16.6nC @ 4.5V | ±10V | 1030pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
X34 PB USM S-MOS (LF) TRANSISTOR |
27.102 |
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π-MOSVI | N-Channel | MOSFET (Metal Oxide) | 30V | 400mA (Ta) | 3.3V, 10V | 700mOhm @ 200MA, 10V | 1.8V @ 100µA | - | ±20V | 20pF @ 5V | - | 150mW (Ta) | 150°C | Surface Mount | USM | SC-70, SOT-323 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
23.400 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 20V | 3A (Ta) | 1.5V, 4.5V | 71mOhm @ 3A, 4.5V | 1V @ 1mA | 2nC @ 4V | ±8V | 153pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N CH 30V 6A 2-3Z1A |
48.078 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 5A, 10V | 2.5V @ 100µA | 3.4nC @ 4.5V | ±20V | 436pF @ 15V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 40V 1.8A ES6 |
30.696 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 40V | 1.8A (Ta) | 1.8V, 8V | 195mOhm @ 1A, 8V | 1.2V @ 1mA | 1.1nC @ 4.2V | ±12V | 130pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | ES6 | SOT-563, SOT-666 |
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Toshiba Semiconductor and Storage |
SMALL LOW ON RESISTANCE MOSFET |
29.532 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 20V | 6A (Ta) | 1.8V, 8V | 22.1mOhm @ 6A, 8V | 1V @ 1mA | 38.5nC @ 8V | ±10V | 1331pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
X34 : SMALL LOW ON RESISTANCE NC |
29.868 |
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π-MOSIV | N-Channel | MOSFET (Metal Oxide) | 30V | 100mA (Ta) | 2.5V, 4V | 4Ohm @ 10mA, 4V | 1.5V @ 100µA | - | ±20V | 7.8pF @ 3V | - | 200mW (Ta) | 150°C | Surface Mount | S-Mini | TO-236-3, SC-59, SOT-23-3 |
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Toshiba Semiconductor and Storage |
X34 SMALL LOW ON RESISTANCE MOSF |
27.024 |
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π-MOSV | N-Channel | MOSFET (Metal Oxide) | 60V | 650mA (Ta) | 3V, 5V | 1.8Ohm @ 150mA, 5V | 2V @ 1mA | 1.5nC @ 5V | ±12V | 60pF @ 12V | - | 1W (Ta) | 150°C | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 2.5A TSM |
52.902 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 2.5A (Ta) | 4.5V, 10V | 107mOhm @ 2A, 10V | 2.8V @ 1mA | 7nC @ 10V | ±20V | 235pF @ 30V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 5.5A |
100.122 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 5.5A (Ta) | 1.5V, 4.5V | 29.8mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | ±8V | 840pF @ 10V | - | 500mW (Ta) | 150°C (TJ) | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 20V 10A UDFN6B |
27.744 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 20V | 10A (Ta) | 1.5V, 4.5V | 15.3mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | ±8V | 2600pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 12V 14A UDFN6B |
103.158 |
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U-MOSVII | P-Channel | MOSFET (Metal Oxide) | 12V | 14A (Ta) | - | 9.1mOhm @ 4A, 8V | 1V @ 1mA | 47nC @ 4.5V | - | 3350pF @ 6V | - | - | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A SOT-23F |
27.714 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36mOhm @ 5A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 1.2W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 38V 2A |
24.408 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 38V | 2A (Ta) | 4V, 10V | 150mOhm @ 2A, 10V | 1.7V @ 1mA | 3nC @ 10V | ±20V | 120pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | SOT-23F | SOT-23-3 Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 6A 6-UDFNB |
22.620 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 6A (Ta) | 4V, 10V | 36mOhm @ 4A, 10V | 2.5V @ 100µA | 9.3nC @ 10V | ±20V | 550pF @ 10V | - | 2.5W (Ta) | 150°C | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 3.5A UFM |
29.460 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 3.5A (Ta) | 4.5V, 10V | 69mOhm @ 2A, 10V | 2.5V @ 100µA | 3.2nC @ 4.5V | ±20V | 430pF @ 15V | - | 1.8W (Ta) | 175°C | Surface Mount | UFM | 3-SMD, Flat Leads |
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Toshiba Semiconductor and Storage |
MOSFET P CH 12V 12A UDFN6B |
42.912 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 12V | 12A (Ta) | 1.2V, 4.5V | 12mOhm @ 4A, 4.5V | 1V @ 1mA | 37.6nC @ 4.5V | ±6V | 2700pF @ 10V | - | 1.25W (Ta) | 150°C (TJ) | Surface Mount | 6-UDFNB (2x2) | 6-WDFN Exposed Pad |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 12V 7A 6WCSP6C |
28.620 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 12V | 7A (Ta) | 1.5V, 4.5V | 18mOhm @ 1.5A, 4.5V | 1V @ 250µA | 5.4nC @ 4.5V | ±8V | 600pF @ 6V | - | 1.6W (Ta) | 150°C (TJ) | Surface Mount | 6-WCSPC (1.5x1.0) | 6-UFBGA, WLCSP |