Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 16/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 80V 55A TO-220 |
4.302 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 55A (Tc) | 10V | 12.2mOhm @ 17.5A, 10V | 4V @ 300µA | 25nC @ 10V | ±20V | 1700pF @ 40V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 4.5A TO-220SIS |
6.480 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 4.5A (Ta) | 10V | 1.75Ohm @ 2.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 42A 8SOP-ADV |
2.664 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 42A (Ta) | 4.5V, 10V | 2.6mOhm @ 21A, 10V | 2.3V @ 500µA | 61nC @ 10V | ±20V | 5200pF @ 10V | - | 1.6W (Ta), 57W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 20A 8SOP-ADV |
5.868 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 8.2mOhm @ 10A, 10V | 2.3V @ 200µA | 23nC @ 10V | ±20V | 1900pF @ 10V | - | 1.6W (Ta), 32W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 60V 60A DPAK-3 |
6.624 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 60V | 60A (Ta) | 6V, 10V | 11.2mOhm @ 30A, 10V | 3V @ 1mA | 156nC @ 10V | +10V, -20V | 7760pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET P-CH 40V 80A DPAK-3 |
5.616 |
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U-MOSVI | P-Channel | MOSFET (Metal Oxide) | 40V | 80A (Ta) | 6V, 10V | 5.2mOhm @ 40A, 10V | 3V @ 1mA | 158nC @ 10V | +10V, -20V | 7770pF @ 10V | - | 100W (Tc) | 175°C (TJ) | Surface Mount | DPAK+ | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A IPAK |
4.500 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.22Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 25A TO-220AB |
3.078 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 60V | 25A (Ta) | - | 18mOhm @ 12.5A, 10V | - | 29nC @ 10V | - | - | - | 60W (Tc) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 10A TO220SIS |
5.850 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 2.5A TO-220SIS |
2.592 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 2.5A (Ta) | 10V | 2.8Ohm @ 1.3A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 8A DPAK |
8.640 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 8A (Ta) | 10V | 500mOhm @ 4A, 10V | 3.7V @ 400µA | 18.5nC @ 10V | ±30V | 570pF @ 300V | Super Junction | 80W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 5A TO220SIS |
2.016 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 5.5A TO-220SIS |
7.740 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 5.5A (Ta) | 10V | 1.35Ohm @ 2.8A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | - | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.8A IPAK-OS |
3.474 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.8A (Ta) | 10V | 1.05Ohm @ 2.9A, 10V | 3.5V @ 180µA | 11nC @ 10V | ±30V | 390pF @ 300V | - | 60W (Tc) | 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Stub Leads, IPak |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 12A TO-220SIS |
7.686 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 12A (Ta) | 10V | 520mOhm @ 6A, 10V | 4V @ 1mA | 25nC @ 10V | ±30V | 1350pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 30V 56A 8SOP-ADV |
7.866 |
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U-MOSVII-H | N-Channel | MOSFET (Metal Oxide) | 30V | 56A (Ta) | 4.5V, 10V | 1.9mOhm @ 28A, 10V | 2.3V @ 1mA | 91nC @ 10V | ±20V | 7700pF @ 10V | - | 1.6W (Ta), 70W (Tc) | 150°C (TJ) | Surface Mount | 8-SOP Advance (5x5) | 8-PowerVDFN |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 5A TO-220SIS |
4.896 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 5A (Ta) | 10V | 1.5Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 6A TO-220SIS |
6.372 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 6A (Ta) | 10V | 1.4Ohm @ 3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5A TO-220SIS |
6.354 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 5A (Ta) | 10V | 1.7Ohm @ 2.5A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 450V 6.5A TO-220SIS |
7.830 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 450V | 6.5A (Ta) | 10V | 1.2Ohm @ 3.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 540pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2A TO-220SIS |
6.570 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 2A (Ta) | 10V | 3.26Ohm @ 1A, 10V | 4.4V @ 1mA | 9nC @ 10V | ±30V | 380pF @ 25V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 18A TO-220AB |
4.752 |
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U-MOSIV | N-Channel | MOSFET (Metal Oxide) | 100V | 18A (Ta) | - | 42mOhm @ 9A, 10V | - | 33nC @ 10V | - | - | - | - | 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 5.5A TO-220SIS |
5.220 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 5.5A (Ta) | 10V | 1.48Ohm @ 2.8A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 525V 6A TO-220SIS |
3.526 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 525V | 6A (Ta) | 10V | 1.3Ohm @ 3A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 500V 7A TO-220SIS |
7.452 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 500V | 7A (Ta) | 10V | 1.22Ohm @ 3.5A, 10V | 4.4V @ 1mA | 12nC @ 10V | ±30V | 600pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 20A D2PAK |
8.964 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 20A (Ta) | 10V | 155mOhm @ 10A, 10V | 3.7V @ 1mA | 48nC @ 10V | ±30V | 1680pF @ 300V | Super Junction | 165W (Tc) | 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 2.5A TO-220SIS |
2.484 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 2.5A (Ta) | 10V | 2.51Ohm @ 1.3A, 10V | 4.4V @ 1mA | 11nC @ 10V | ±30V | 490pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 5A TO-220SIS |
3.042 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 600V | 5A (Ta) | 10V | 1.43Ohm @ 2.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 4.5A TO-220SIS |
5.958 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 650V | 4.5A (Ta) | 10V | 1.67Ohm @ 2.3A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 550V 7A TO-220SIS |
8.424 |
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π-MOSVII | N-Channel | MOSFET (Metal Oxide) | 550V | 7A (Ta) | 10V | 1.25Ohm @ 3.5A, 10V | 4.4V @ 1mA | 16nC @ 10V | ±30V | 700pF @ 25V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |