Toshiba Semiconductor and Storage Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
HerstellerToshiba Semiconductor and Storage
Datensätze 786
Seite 12/27
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Toshiba Semiconductor and Storage |
X35 PB-F POWER MOSFET TRANSISTOR |
4.554 |
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U-MOSIX-H | N-Channel | MOSFET (Metal Oxide) | 40V | 82A (Tc) | 4.5V, 10V | 3.8mOhm @ 30A, 4.5V | 2.4V @ 500µA | 63.4nC @ 10V | ±20V | 4670pF @ 20V | - | 36W (Tc) | 175°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 60V 58A TO-220 |
7.560 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Ta) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 110W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 60V 58A TO-220 |
8.874 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 60V | 58A (Tc) | 10V | 5.4mOhm @ 29A, 10V | 4V @ 500µA | 46nC @ 10V | ±20V | 3400pF @ 30V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 100V 52A TO220 |
8.442 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 52A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 72W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 52A TO-220 |
5.526 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 22A (Tc) | 10V | 13.8mOhm @ 11A, 10V | 4V @ 300µA | 28nC @ 10V | ±20V | 1800pF @ 50V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 75A TO-220 |
8.028 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 75A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 103W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 100V 34A TO-220 |
6.564 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 100V | 34A (Tc) | 10V | 9.5mOhm @ 17A, 10V | 4V @ 500µA | 38nC @ 10V | ±20V | 2600pF @ 50V | - | 35W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 5.2A TO-220SIS |
6.408 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 5.2A (Ta) | 10V | 1.2Ohm @ 2.6A, 10V | 3.5V @ 170µA | 10.5nC @ 10V | ±30V | 380pF @ 300V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V TO220SIS |
5.382 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 10A (Ta) | 10V | 750mOhm @ 5A, 10V | 4V @ 1mA | 40nC @ 10V | ±30V | 1300pF @ 25V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N CH 80V 72A TO-220 |
2.376 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 80V | 72A (Ta) | 10V | 4.3mOhm @ 36A, 10V | 4V @ 1mA | 81nC @ 10V | ±20V | 5500pF @ 40V | - | 192W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 9.7A TO-220 |
6.030 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 9.7A (Ta) | 10V | 380mOhm @ 4.9A, 10V | 3.7V @ 500µA | 20nC @ 10V | ±30V | 700pF @ 300V | Super Junction | 100W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
5.850 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-247 | TO-247-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 27.6A TO-220SIS |
8.676 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 27.6A (Ta) | 10V | 110mOhm @ 13.8A, 10V | 3.5V @ 1.6mA | 75nC @ 10V | ±30V | 3000pF @ 300V | - | 45W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 600V 30.8A TO-220 |
5.310 |
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DTMOSIV-H | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 9.4A, 10V | 3.5V @ 1.5mA | 65nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 11.5A DPAK |
7.182 |
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DTMOSV | N-Channel | MOSFET (Metal Oxide) | 650V | 11.5A (Tc) | 10V | 290mOhm @ 5.8A, 10V | 4V @ 450µA | 25nC @ 10V | ±30V | 730pF @ 300V | - | 100W (Tc) | 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 120V 32A TO-220 |
8.118 |
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U-MOSVIII-H | N-Channel | MOSFET (Metal Oxide) | 120V | 32A (Tc) | 10V | 13.8mOhm @ 16A, 10V | 4V @ 500µA | 34nC @ 10V | ±20V | 2000pF @ 60V | - | 30W (Tc) | 150°C (TJ) | Through Hole | TO-220SIS | TO-220-3 Full Pack |
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Toshiba Semiconductor and Storage |
MOSFET N-CH 650V 13.7A TO-220 |
6.678 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 650V | 13.7A (Ta) | 10V | 250mOhm @ 6.9A, 10V | 3.5V @ 690µA | 35nC @ 10V | ±30V | 1300pF @ 300V | - | 130W (Tc) | 150°C (TJ) | Through Hole | TO-220 | TO-220-3 |
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Toshiba Semiconductor and Storage |
MOSFET N CH 600V 30.8A TO-3P(N) |
8.298 |
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DTMOSIV | N-Channel | MOSFET (Metal Oxide) | 600V | 30.8A (Ta) | 10V | 88mOhm @ 15.4A, 10V | 3.7V @ 1.5mA | 86nC @ 10V | ±30V | 3000pF @ 300V | Super Junction | 230W (Tc) | 150°C (TJ) | Through Hole | TO-3P(N) | TO-3P-3, SC-65-3 |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
8.568 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS=20 |
7.344 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-3 |
7.290 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
7.362 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
8.334 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS=-2 |
2.412 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
2.556 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
2.628 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET P-CH VDSS-20 |
3.726 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS30V |
2.052 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS60V |
3.526 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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Toshiba Semiconductor and Storage |
SMALL SIGNAL MOSFET N-CH VDSS20V |
4.986 |
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* | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |