The new generation of gallium nitride power discrete devices offer superior efficiency and power density

     Infineon Technologies has further strengthened its GaN portfolio with the introduction of a new family of high-voltage discrete devices, the CoolGaN Transistor 650V G5. Applications targeted for this new product family range from consumer and industrial SMPS (such as USB-C adapters and chargers), lighting, televisions, data center and telecom rectifiers to renewable energy and motor drives in home appliances.

     The new high voltage transistor product family offers a variety of RDS (on) package combinations. Ten RDS (on) classes are available for various SMD packages such as ThinPAK 5x6, DFN 8x8, TOLL and TOLT.

     The latest generation of CoolGaN was developed as a plug-in replacement for the CoolGaN transistor 600V G1, allowing for a rapid redesign of existing platforms. The new device provides improved performance figures to ensure competitive switching performance in focusing applications. Compared to key competitors and the company's previous product lines, the new series has 50% less output capacitance (Eoss) storage energy, 60% higher drain-source charge (Qoss), and 60% lower gate charge (Qg). Combined, these features offer superior efficiency in both hard and soft switching applications. This results in significantly lower power losses compared to conventional silicon technology, which can range from 20% to 60% depending on the specific use case.

     These advantages allow the device to operate at high frequencies with minimal power loss, resulting in superior power density. These devices enable SMPS applications to be smaller, lighter, or to increase the output power range for a given form factor.