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The new 2-in-1 SiC MOSFET mold blocks significantly reduce the size of xEV inverters

Jul 9 2024 2024-07 Semiconductors Rohm Semiconductor
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ROHM has developed four models as part of the TRCDRIVE pack series with 2-in-1 SiC moulded modules (two 750V-rated: BSTxxxD08P4A1x4, two 1,200V-rated: BSTxxxD12P4A1x1) optimised for xEV traction inverters. The TRCDRIVE pack supports up to 300kW and features high power density and a unique terminal configuration, which help solve the key challenges of traction inverters in terms of miniaturisation, higher efficiency, and fewer person-hours.

     ROHM has developed four models, as part of the TRCDRIVE package series, with 2 in 1 SiC molded die blocks (two 750 v rated :BSTxxxD08P4A1x4 and two 1200 v rated :BSTxxxD12P4A1x1), optimized for xEV traction inverters. The TRCDRIVE component supports up to 300kW of power with high power density and a unique terminal configuration that helps address key challenges in traction inverters in terms of miniaturization, greater efficiency and less man-hours.

     With the rapid development of vehicle electrification, enabling a decarbonized society, progress is being made in the development of more efficient, compact and lightweight electric powertrains. However, for SiC power devices, which have received much attention as key devices, achieving low loss in small sizes has been a difficult challenge. The company has addressed these issues in its new range of powertrains.

     This is the company's trademarked brand of SiC molded modules developed specifically for traction inverter drive applications, which reduce size by using a unique construction with maximum heat dissipation area. On top of that, its fourth-generation low-on-resistance SiC MOSFETs are built in, producing industry-leading power density 1.5 times higher than the average SiC mold block, while significantly contributing to the miniaturization of xev inverters.

     These modules are also equipped with control signal terminals that can be easily connected by simply pushing the gate drive plate from the top using a crimping pin, greatly reducing installation time. In addition, the low inductance (5.7nH) is achieved by maximizing the current path and utilizing the main wiring of the double-layer bus structure, helping to reduce losses during the switching process. Although modules are being developed, a mass production system similar to discrete products has been established, which can increase production capacity by 30 times compared to traditional SiC she'll type modules.

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