Littelfuse introduces IX4352NE low side gate drivers for SiC MOSFETs and high power IGBTs

     Littelfuse announces IX4352NE low-side SiC MOSFETs and IGBT gate drivers. This innovative driver is specifically designed to drive silicon carbide (SiC) MOSFETs and high power insulated gate bipolar transistors (IGBTs) in industrial applications.

     The main advantage of the IX4352NE is its independent 9A pull/fill current output, which supports tailor-made on and off timing while minimizing switching losses. The internal negative charge regulator also provides user selectable negative gate drive bias for higher dV/dt immunity and faster turn-off speeds. With an operating voltage range of up to 35V (VDD-VSS), the driver offers excellent flexibility and performance.

     One of the IX4352NE's standout features is the internal negative charge pump regulator, which requires no external auxiliary power devices or DC/DC converters. This feature is especially useful for turning off SiC MOSFETs, saving valuable space typically required by external logic level converter circuits. The logic input is compatible with standard TTL or CMOS logic levels, further enhancing the ability to save space.

     With its comprehensive features, the IX4352NE simplifies circuit design and provides a higher degree of integration. Built-in protection features such as desaturation detection (DESAT), undervoltage lock (UVLO) and thermal shut-off (TSD) with soft turn-off fill current drivers ensure that power devices and gate drivers are protected. Integrated leak-open FAULT outputs signal a fault to the microcontroller for increased safety and reliability. In addition, the IX4352NE saves valuable PCB space and increases circuit density, helping to improve overall system efficiency.

     "The IX4352NE extends our extensive family of low-side gate drivers with a new 9A pull/fill current driver that simplifies the gate drive circuitry required for SiC MOSFETs." June Zhang, Product Manager, Littelfuse Integrated Circuits Division (SBU), said, "Its various built-in protection features and integrated charge pump provide an adjustable negative gate drive voltage that improves dV/dt immunity and turn-off speed. As a result, the product can be used to drive any SiC MOSFET or power IGBT, whether it's a Littelfuse device or any other similar device on the market."