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Infineon introduces the next generation CoolGaN transistor family based on the 8-inch foundry process

Mai 31 2024 2024-05 Connectors Infineon Technologies
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Infineon Technologies AG has introduced two new iterations of high voltage (HV) and medium voltage (MV) CoolGaN devices. These advancements allow customers to utilize Gallium Nitride (GaN) in voltage ranges spanning from 40 V to 700 V. This expanded range of applications contributes to the promotion of digitalization and decarbonization.

     Infineon Technologies AG has introduced two new iterations of high voltage (HV) and medium voltage (MV) CoolGaN devices. These advancements allow customers to utilize Gallium Nitride (GaN) in voltage ranges spanning from 40 V to 700 V. This expanded range of applications contributes to the promotion of digitalization and decarbonization.

     Both of these product families are produced using advanced 8-inch in-house foundry methods in Kulim (Malaysia) and Villach (Austria). Infineon is expanding its CoolGaN advantages and capacity to ensure a strong supply chain in the GaN devices industry. The market is projected to develop at an average annual growth rate (CAGR) of 46 percent over the next five years, as reported by Yole Group.

     Infineon states that this announcement is a favorable continuation of their acquisition of GaN Systems in the previous year, and it introduces a significantly enhanced degree of efficiency and performance for their clients. The latest iterations of the Infineon CoolGaN family, designed for high and medium voltage applications, showcase the product’s benefits and are produced exclusively on 8-inch wafers, highlighting the rapid adaptability of Gallium Nitride (GaN) technology to bigger wafer sizes.

     The new 650 V G5 family is designed to cater to many applications in consumer, data center, industrial, and solar sectors. Infineon has developed a new line of high voltage products based on GIT technology, which represents the next level of advancement. The second newly produced family, created using the 8-inch process, consists of medium voltage G3 devices. These devices include CoolGaN Transistors with voltage classes of 60 V, 80 V, 100 V, and 120 V, as well as 40 V bidirectional switch (BDS) devices. The G3 devices, designed for motor drive, telecom, data center, solar, and consumer applications, operate at medium voltage.

     The CoolGaN 650 V G5 is scheduled to be released in the fourth quarter of 2024, while the medium voltage CoolGaN G3 is expected to be available in the third quarter of 2024. Currently, samples are accessible.

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