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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 83/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
SK55B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
2.196
-
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK55BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 5A DO214AA
6.408
Automotive, AEC-Q101
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK56B M4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
2.790
-
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SK56BHM4G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 60V 5A DO214AA
6.894
Automotive, AEC-Q101
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SR515HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 5A DO201AD
5.166
Automotive, AEC-Q101
Schottky
150V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 150V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SR520HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 200V 5A DO201AD
8.820
Automotive, AEC-Q101
Schottky
200V
5A
1.05V @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
100µA @ 200V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
S4K R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 4A DO214AB
5.220
-
Standard
800V
4A
1.15V @ 4A
Fast Recovery =< 500ns, > 200mA (Io)
-
10µA @ 800V
60pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3B R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
4.050
-
Standard
100V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 100V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3D R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
5.886
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3F R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AB
3.492
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS3J R7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AB
2.790
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SF31G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3.078
-
Standard
50V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 50V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF32G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
4.788
-
Standard
100V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 100V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
SF34G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
6.102
-
Standard
200V
3A
950mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
5µA @ 200V
80pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
6A05G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 6A R-6
6.912
-
Standard
50V
6A
1.1V @ 6A
Standard Recovery >500ns, > 200mA (Io)
-
10µA @ 50V
60pF @ 4V, 1MHz
Through Hole
-
R-6
-55°C ~ 150°C
ES3DB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
7.866
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3DBHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
7.146
Automotive, AEC-Q101
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
46pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3GB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
4.464
-
Standard
400V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3GBHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
2.142
Automotive, AEC-Q101
Standard
400V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3HB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
4.878
-
Standard
500V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3HBHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 500V 3A DO214AA
7.470
Automotive, AEC-Q101
Standard
500V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 500V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
SR504HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 5A DO201AD
3.546
Automotive, AEC-Q101
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
SK52C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 20V DO-214AB
6.696
-
Schottky
20V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK53C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 30V DO-214AB
5.742
-
Schottky
30V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK54C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 40V DO-214AB
6.696
-
Schottky
40V
5A
550mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK55C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 50V DO-214AB
3.924
-
Schottky
50V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
SK56C V6G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 5A 60V DO-214AB
4.860
-
Schottky
60V
5A
750mV @ 5A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 60V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3FB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
7.416
-
Standard
300V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3FBHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
3.472
Automotive, AEC-Q101
Standard
300V
3A
1.13V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
41pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3JB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
8.334
-
Standard
600V
3A
1.45V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 600V
34pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C