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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 74/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
HS3DB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AA
6.660
-
Standard
200V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 200V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3FB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 3A DO214AA
3.024
-
Standard
300V
3A
1V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 300V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3GB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO214AA
2.592
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
10µA @ 400V
80pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS3JB M4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
5.310
-
Standard
600V
3A
1.7V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
10µA @ 600V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
UG2JA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AC
3.330
-
Standard
600V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
55ns
2µA @ 600V
20pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
ES2AHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 2A DO214AA
7.074
Automotive, AEC-Q101
Standard
50V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2BHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
4.878
Automotive, AEC-Q101
Standard
100V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2CHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
6.228
Automotive, AEC-Q101
Standard
150V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2DHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
2.214
Automotive, AEC-Q101
Standard
200V
2A
950mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2FHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
4.284
Automotive, AEC-Q101
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES2GHM4G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
7.776
Automotive, AEC-Q101
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 400V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
1N5820 A0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 3A DO201AD
7.992
-
Schottky
20V
3A
475mV @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
200pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 125°C
FR301G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO201AD
3.400
-
Standard
50V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR302G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO201AD
3.528
-
Standard
100V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR303G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO201AD
8.334
-
Standard
200V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
FR304G R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 3A DO201AD
2.268
-
Standard
400V
3A
1.3V @ 3A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
30pF @ 4V, 1MHz
Through Hole
DO-201AD, Axial
DO-201AD
-55°C ~ 150°C
ES2F R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
6.174
-
Standard
300V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 300V
20pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ESH2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
6.462
-
Standard
100V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 100V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
ESH2C R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 2A DO214AA
7.722
-
Standard
150V
2A
900mV @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
20ns
2µA @ 150V
25pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 175°C
RS3A V7G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
6.156
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
150ns
10µA @ 50V
-
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
HS2J R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 2A DO214AA
5.526
-
Standard
600V
2A
1.7V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 600V
30pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2B R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 2A DO214AA
6.354
-
Standard
100V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2D R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 2A DO214AA
6.570
-
Standard
200V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2F R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 300V 2A DO214AA
5.958
-
Standard
300V
2A
1V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 300V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
HS2G R5G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO214AA
8.172
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
50ns
5µA @ 400V
50pF @ 4V, 1MHz
Surface Mount
DO-214AA, SMB
DO-214AA (SMB)
-55°C ~ 150°C
ES3A V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 3A DO214AB
3.564
-
Standard
50V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 50V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3B V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 3A DO214AB
8.280
-
Standard
100V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 100V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3C V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 150V 3A DO214AB
5.562
-
Standard
150V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 150V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3D V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
3.490
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
35ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C
ES3DV V6G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
4.392
-
Standard
200V
3A
-
Fast Recovery =< 500ns, > 200mA (Io)
20ns
10µA @ 200V
45pF @ 4V, 1MHz
Surface Mount
DO-214AB, SMC
DO-214AB (SMC)
-55°C ~ 150°C