Taiwan Semiconductor Corporation Gleichrichter - Single

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Diodentyp

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Spannung - DC-Rückwärtsgang (Vr) (max.)

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Spannung - Vorwärts (Vf) (Max) @ If

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Reverse Recovery Time (trr)

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Strom - Umkehrleckage @ Vr

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Kapazität @ Vr, F.

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Montagetyp

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single

HerstellerTaiwan Semiconductor Corporation

Datensätze 5.388

Seite 61/180

Teilenummer	Hersteller	Beschreibung	Auf Lager	Serie	Diodentyp	Spannung - DC-Rückwärtsgang (Vr) (max.)	Current - Average Rectified (Io)	Spannung - Vorwärts (Vf) (Max) @ If	Geschwindigkeit	Reverse Recovery Time (trr)	Strom - Umkehrleckage @ Vr	Kapazität @ Vr, F.	Montagetyp	Paket / Fall	Lieferantengerätepaket	Betriebstemperatur - Verbindungsstelle
HER206G R0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	3.816	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
ES1BHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AC	8.946	Automotive, AEC-Q101	Standard	100V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 100V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1CHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A DO214AC	6.696	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1DHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AC	8.046	Automotive, AEC-Q101	Standard	200V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 200V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1FHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 1A DO214AC	2.430	Automotive, AEC-Q101	Standard	300V	1A	1.3V @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 300V	16pF @ 4V, 1MHz	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
SRT110HR0G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 100V 1A TS-1	7.614	Automotive, AEC-Q101	Schottky	100V	1A	800mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 100V	-	Through Hole	T-18, Axial	TS-1	-55°C ~ 150°C
SS215L RUG	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 150V 2A SUB SMA	5.400	-	Schottky	150V	2A	950mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 150V	-	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER204G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 300V 2A DO204AC	8.406	-	Standard	300V	2A	1V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 300V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
S1AB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A DO214AA	8.136	-	Standard	50V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 50V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1BB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 1A DO214AA	6.912	-	Standard	100V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 100V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	2.322	-	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1DBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 1A DO214AA	8.154	Automotive, AEC-Q101	Standard	200V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 200V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	6.534	-	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1GBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 1A DO214AA	4.428	Automotive, AEC-Q101	Standard	400V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 400V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3.654	-	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1JBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 1A DO214AA	3.456	Automotive, AEC-Q101	Standard	600V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 600V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	2.232	-	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1KBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 1A DO214AA	6.858	Automotive, AEC-Q101	Standard	800V	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 800V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MB R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	8.100	-	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S1MBHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 1000V 1A DO214AA	8.694	Automotive, AEC-Q101	Standard	-	1A	1.1V @ 1A	Standard Recovery >500ns, > 200mA (Io)	-	5µA @ 1000V	12pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2KHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 800V 2A DO214AA	7.632	Automotive, AEC-Q101	Standard	800V	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 800V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
S2MHR5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 2A DO214AA	3.418	Automotive, AEC-Q101	Standard	-	2A	1.15V @ 2A	Standard Recovery >500ns, > 200mA (Io)	1.5µs	1µA @ 1000V	30pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2A R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 2A DO214AA	3.258	-	Standard	50V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 50V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2B R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 100V 2A DO214AA	8.748	-	Standard	100V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 100V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
RS2D R5G	Taiwan Semiconductor Corporation	DIODE GEN PURP 200V 2A DO214AA	6.138	-	Standard	200V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	150ns	5µA @ 200V	50pF @ 4V, 1MHz	Surface Mount	DO-214AA, SMB	DO-214AA (SMB)	-55°C ~ 150°C
SK29AHM2G	Taiwan Semiconductor Corporation	DIODE SCHOTTKY 90V 2A DO214AC	4.050	Automotive, AEC-Q101	Schottky	90V	2A	850mV @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	-	100µA @ 90V	-	Surface Mount	DO-214AC, SMA	DO-214AC (SMA)	-55°C ~ 150°C
ES1ALHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 50V 1A SUB SMA	7.470	Automotive, AEC-Q101	Standard	50V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 50V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
ES1CLHR3G	Taiwan Semiconductor Corporation	DIODE GEN PURP 150V 1A SUB SMA	7.164	Automotive, AEC-Q101	Standard	150V	1A	950mV @ 1A	Fast Recovery =< 500ns, > 200mA (Io)	35ns	5µA @ 150V	10pF @ 4V, 1MHz	Surface Mount	DO-219AB	Sub SMA	-55°C ~ 150°C
HER205G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 400V 2A DO204AC	2.952	-	Standard	400V	2A	1.3V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	50ns	5µA @ 400V	35pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C
HER206G A0G	Taiwan Semiconductor Corporation	DIODE GEN PURP 600V 2A DO204AC	8.460	-	Standard	600V	2A	1.7V @ 2A	Fast Recovery =< 500ns, > 200mA (Io)	75ns	5µA @ 600V	20pF @ 4V, 1MHz	Through Hole	DO-204AC, DO-15, Axial	DO-204AC (DO-15)	-55°C ~ 150°C

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