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Taiwan Semiconductor Corporation Gleichrichter - Single

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KategorieHalbleiter / Dioden & Gleichrichter / Gleichrichter - Single
HerstellerTaiwan Semiconductor Corporation
Datensätze 5.388
Seite 42/180
Bild
Teilenummer
Hersteller
Beschreibung
Auf Lager
Menge
Serie
Diodentyp
Spannung - DC-Rückwärtsgang (Vr) (max.)
Current - Average Rectified (Io)
Spannung - Vorwärts (Vf) (Max) @ If
Geschwindigkeit
Reverse Recovery Time (trr)
Strom - Umkehrleckage @ Vr
Kapazität @ Vr, F.
Montagetyp
Paket / Fall
Lieferantengerätepaket
Betriebstemperatur - Verbindungsstelle
SRT13 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A TS-1
2.898
-
Schottky
30V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
SRT14 R0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 1A TS-1
5.328
-
Schottky
40V
1A
550mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
-
Through Hole
T-18, Axial
TS-1
-55°C ~ 125°C
S1JHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
4.644
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.5µs
1µA @ 600V
12pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 175°C
FR204G A0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 2A DO204AC
4.932
-
Standard
400V
2A
1.3V @ 2A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
SR002HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
6.984
Automotive, AEC-Q101
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
3.526
Automotive, AEC-Q101
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR004HR0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 40V 500MA DO204AL
2.772
Automotive, AEC-Q101
Schottky
40V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 40V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
2A06GHR0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 2A DO204AC
6.372
Automotive, AEC-Q101
Standard
800V
2A
1V @ 2A
Standard Recovery >500ns, > 200mA (Io)
-
5µA @ 800V
15pF @ 4V, 1MHz
Through Hole
DO-204AC, DO-15, Axial
DO-204AC (DO-15)
-55°C ~ 150°C
S1AL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
2.934
-
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1ALHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A SUB SMA
3.186
Automotive, AEC-Q101
Standard
50V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 50V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1BLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
3.024
Automotive, AEC-Q101
Standard
100V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 100V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DL R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
7.794
-
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1DLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A SUB SMA
5.184
Automotive, AEC-Q101
Standard
200V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 200V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1GLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A SUB SMA
6.714
Automotive, AEC-Q101
Standard
400V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 400V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
S1JLHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
2.232
Automotive, AEC-Q101
Standard
600V
1A
1.1V @ 1A
Standard Recovery >500ns, > 200mA (Io)
1.8µs
5µA @ 600V
9pF @ 4V, 1MHz
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 175°C
UF4006 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 800V 1A DO204AL
5.616
-
Standard
800V
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 800V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
UF4007 R0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 1A DO204AL
6.840
-
Standard
-
1A
1.7V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
75ns
5µA @ 1000V
17pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 150°C
SS115LS RVG
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 150V 1A SOD123HE
4.806
-
Schottky
150V
1A
900mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
50µA @ 150V
80pF @ 4V, 1MHz
Surface Mount
SOD-123H
SOD-123HE
-55°C ~ 150°C
SR002HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 20V 500MA DO204AL
7.020
Automotive, AEC-Q101
Schottky
20V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 20V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
SR003HA0G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 500MA DO204AL
6.444
Automotive, AEC-Q101
Schottky
30V
500mA
550mV @ 500mA
Fast Recovery =< 500ns, > 200mA (Io)
-
500µA @ 30V
110pF @ 4V, 1MHz
Through Hole
DO-204AL, DO-41, Axial
DO-204AL (DO-41)
-55°C ~ 125°C
RS2BA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1.5A DO214AC
8.406
-
Standard
100V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2DA M2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1.5A DO214AC
6.390
-
Standard
200V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
SS13L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 30V 1A SUB SMA
7.848
-
Schottky
30V
1A
500mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 30V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 125°C
SS15L R3G
Taiwan Semiconductor Corporation
DIODE SCHOTTKY 50V 1A SUB SMA
2.232
-
Schottky
50V
1A
700mV @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
-
400µA @ 50V
-
Surface Mount
DO-219AB
Sub SMA
-55°C ~ 150°C
RS1D R3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
6.282
-
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS2AAHM2G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1.5A DO214AC
4.734
Automotive, AEC-Q101
Standard
50V
1.5A
1.3V @ 1.5A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
50pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS1AHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 50V 1A DO214AC
7.560
Automotive, AEC-Q101
Standard
50V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 50V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS1BHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A DO214AC
2.988
Automotive, AEC-Q101
Standard
100V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 100V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS1DHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 1A DO214AC
3.222
Automotive, AEC-Q101
Standard
200V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 200V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C
RS1GHR3G
Taiwan Semiconductor Corporation
DIODE GEN PURP 400V 1A DO214AC
7.308
Automotive, AEC-Q101
Standard
400V
1A
1.3V @ 1A
Fast Recovery =< 500ns, > 200mA (Io)
150ns
5µA @ 400V
10pF @ 4V, 1MHz
Surface Mount
DO-214AC, SMA
DO-214AC (SMA)
-55°C ~ 150°C