Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 745/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
4.104 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 4.8mOhm @ 80A, 10V | 4V @ 250µA | 170nC @ 10V | ±20V | 6790pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
7.866 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 6.6mOhm @ 68A, 10V | 4V @ 180µA | 110nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
7.434 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 8mOhm @ 58A, 10V | 4V @ 150µA | 96nC @ 10V | ±20V | 3800pF @ 25V | - | 215W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
3.078 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 9.1mOhm @ 50A, 10V | 4V @ 125µA | 80nC @ 10V | ±20V | 3140pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
3.744 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 10V | 5.5mOhm @ 80A, 10V | 4V @ 230µA | 155nC @ 10V | ±20V | 5500pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
7.668 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 4.5mOhm @ 80A, 10V | 2V @ 250µA | 230nC @ 10V | ±20V | 7530pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
4.374 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 6.3mOhm @ 69A, 10V | 2V @ 180µA | 150nC @ 10V | ±20V | 5050pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
4.518 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 7mOhm @ 60A, 10V | 2V @ 150µA | 130nC @ 10V | ±20V | 4210pF @ 25V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
7.092 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 8.5mOhm @ 52A, 10V | 2V @ 125µA | 105nC @ 10V | ±20V | 3480pF @ 25V | - | 190W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
3.492 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 11mOhm @ 40A, 10V | 2V @ 93µA | 80nC @ 10V | ±20V | 2650pF @ 25V | - | 158W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 55V 80A D2PAK |
5.976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 80A (Tc) | 4.5V, 10V | 5mOhm @ 80A, 10V | 2V @ 230µA | 190nC @ 10V | ±20V | 6640pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK |
7.110 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 10V | 7.1mOhm @ 66A, 10V | 4V @ 250µA | 180nC @ 10V | ±20V | 6130pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 75V 80A D2PAK |
2.376 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 80A (Tc) | 4.5V, 10V | 6.8mOhm @ 67A, 10V | 2V @ 250µA | 233nC @ 10V | ±20V | 6820pF @ 25V | - | 300W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 100V 80A D2PAK |
2.100 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 100V | 80A (Tc) | 4.5V, 10V | 14mOhm @ 58A, 10V | 2V @ 2mA | 240nC @ 10V | ±20V | 4540pF @ 25V | - | 250W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 60V 80A D2PAK |
2.628 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 80A (Tc) | 10V | 23mOhm @ 64A, 10V | 4V @ 5.5mA | 173nC @ 10V | ±20V | 5033pF @ 25V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO263-3-2 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 60V 8.83A DPAK |
5.760 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 8.83A (Ta) | - | 300mOhm @ 6.2A, 10V | 4V @ 250µA | 13nC @ 10V | - | 420pF @ 25V | - | 42W (Tc) | - | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 17A DPAK |
6.210 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 17A (Tc) | 10V | 80mOhm @ 7A, 10V | 4V @ 14µA | 10nC @ 10V | ±20V | 400pF @ 25V | - | 30W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 19A DPAK |
8.226 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 19A (Tc) | 4.5V, 10V | 64mOhm @ 8A, 10V | 2V @ 14µA | 13nC @ 10V | ±20V | 445pF @ 25V | - | 47W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 25A DPAK |
2.322 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 25A (Tc) | 4.5V, 10V | 50mOhm @ 11A, 10V | 2V @ 31µA | 33nC @ 10V | ±20V | 850pF @ 25V | - | 75W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 29A DPAK |
3.024 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 29A (Tc) | 10V | 40mOhm @ 13A, 10V | 4V @ 26µA | 18nC @ 10V | ±20V | 710pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
2.052 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 35mOhm @ 13A, 10V | 2V @ 26µA | 24nC @ 10V | ±20V | 790pF @ 25V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
8.478 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 14.7mOhm @ 30A, 10V | 4V @ 80µA | 52nC @ 10V | ±20V | 2070pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
5.976 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 10V | 23mOhm @ 21A, 10V | 4V @ 50µA | 32nC @ 10V | ±20V | 1250pF @ 25V | - | - | - | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
3.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 13mOhm @ 30A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 2300pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 30A DPAK |
8.802 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 30A (Tc) | 4.5V, 10V | 23mOhm @ 22A, 10V | 2V @ 50µA | 42nC @ 10V | ±20V | 1390pF @ 25V | - | 100W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 30A DPAK |
2.484 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 10V | 21.5mOhm @ 25A, 10V | 4V @ 80µA | 57nC @ 10V | ±20V | 1950pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 75V 30A DPAK |
3.942 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 75V | 30A (Tc) | 4.5V, 10V | 20.5mOhm @ 25A, 10V | 2V @ 80µA | 72nC @ 10V | ±20V | 2130pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A DPAK |
4.644 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 50A (Tc) | 10V | 7.3mOhm @ 50A, 10V | 4V @ 85µA | 46.5nC @ 10V | ±20V | 2170pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | PG-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 50A DPAK |
4.572 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 55V | 50A (Tc) | 4.5V, 10V | 12.7mOhm @ 34A, 10V | 2V @ 80µA | 69nC @ 10V | ±20V | 2300pF @ 25V | - | 136W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | P-TO252-3 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 600V 7.3A TO-262 |
4.968 |
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CoolMOS™ | N-Channel | MOSFET (Metal Oxide) | 600V | 7.3A (Tc) | 10V | 600mOhm @ 4.6A, 10V | 5.5V @ 350µA | 35nC @ 10V | ±20V | 970pF @ 25V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | PG-TO262-3-1 | TO-262-3 Long Leads, I²Pak, TO-262AA |