Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 736/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Renesas Electronics America |
MOSFET N-CH 160V 7A TO-3P |
2.340 |
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- | N-Channel | MOSFET (Metal Oxide) | 160V | 7A (Ta) | - | - | - | - | ±15V | 600pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 200V 8A TO-3P |
8.136 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 8A (Ta) | - | - | - | - | ±20V | 600pF @ 10V | - | 100W (Tc) | 150°C (TJ) | Through Hole | TO-3P | TO-3P-3, SC-65-3 |
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Renesas Electronics America |
MOSFET N-CH 60V 2A 4-UPAK |
5.670 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 3V, 4V | 450mOhm @ 1A, 4V | - | - | ±20V | 173pF @ 10V | - | 1W (Ta) | 150°C (TJ) | Surface Mount | UPAK | TO-243AA |
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ON Semiconductor |
MOSFET N-CH 600V 47A TO-247 |
3.834 |
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SuperFET™ | N-Channel | MOSFET (Metal Oxide) | 600V | 47A (Tc) | 10V | 73mOhm @ 23.5A, 10V | 5V @ 250µA | 270nC @ 10V | ±30V | 8000pF @ 25V | - | 417W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-247-3 | TO-247-3 |
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ON Semiconductor |
MOSFET N-CH 600V 2.4A IPAK |
2.610 |
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QFET® | N-Channel | MOSFET (Metal Oxide) | 600V | 2.4A (Tc) | 10V | 3.4Ohm @ 1.2A, 10V | 4V @ 250µA | 14nC @ 10V | ±30V | 565pF @ 25V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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ON Semiconductor |
MOSFET N-CH 30V 76A DPAK |
7.128 |
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PowerTrench® | N-Channel | MOSFET (Metal Oxide) | 30V | 76A (Ta) | 4.5V, 10V | 8mOhm @ 13.8A, 10V | 3V @ 1mA | 40nC @ 10V | ±20V | 1580pF @ 15V | - | 70W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | TO-252 | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 30V 50A TDSON-8 |
7.362 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 28A (Ta), 100A (Tc) | 4.5V, 10V | 2.2mOhm @ 50A, 10V | 2V @ 100µA | 58nC @ 5V | ±20V | 7490pF @ 15V | - | 2.8W (Ta), 104W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
7.794 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 27A (Ta), 100A (Tc) | 4.5V, 10V | 2.4mOhm @ 50A, 10V | 2V @ 90µA | 52nC @ 5V | ±20V | 6530pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 100A TDSON-8 |
3.276 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 25A (Ta), 100A (Tc) | 4.5V, 10V | 2.7mOhm @ 50A, 10V | 2V @ 90µA | 51nC @ 5V | ±20V | 6540pF @ 15V | - | 2.8W (Ta), 89W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 50A TDSON-8 |
3.906 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 23A (Ta), 100A (Tc) | 4.5V, 10V | 3.2mOhm @ 50A, 10V | 2V @ 70µA | 39nC @ 5V | ±20V | 5080pF @ 15V | - | 2.8W (Ta), 78W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 100A TDSON-8 |
3.834 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 21A (Ta), 100A (Tc) | 4.5V, 10V | 3.7mOhm @ 50A, 10V | 2V @ 50µA | 29nC @ 5V | ±20V | 3660pF @ 15V | - | 2.8W (Ta), 69W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 80A TDSON-8 |
7.128 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 18A (Ta), 80A (Tc) | 4.5V, 10V | 5.2mOhm @ 50A, 10V | 2V @ 40µA | 22nC @ 5V | ±20V | 2820pF @ 15V | - | 2.8W (Ta), 54W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-6 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 40A TDSON-8 |
3.960 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 15A (Ta), 40A (Tc) | 4.5V, 10V | 7.2mOhm @ 40A, 10V | 2V @ 30µA | 18nC @ 5V | ±20V | 2230pF @ 15V | - | 2.8W (Ta), 60W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 35A TDSON-8 |
5.004 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 14A (Ta), 35A (Tc) | 4.5V, 10V | 8.5mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | ±20V | 1800pF @ 15V | - | 2.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 35A TDSON-8 |
6.498 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 14.6A (Ta), 35A (Tc) | 4.5V, 10V | 9.4mOhm @ 35A, 10V | 2V @ 25µA | 14nC @ 5V | ±20V | 1800pF @ 15V | - | 2.8W (Ta), 52W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 25V 30A TDSON-8 |
3.510 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 25V | 13A (Ta), 30A (Tc) | 4.5V, 10V | 10.6mOhm @ 30A, 10V | 2V @ 20µA | 11nC @ 5V | ±20V | 1370pF @ 15V | - | 2.8W (Ta), 43W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | PG-TDSON-8-1 | 8-PowerTDFN |
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Infineon Technologies |
MOSFET N-CH 30V 12A 8DSO |
8.874 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 12A (Ta) | 4.5V, 10V | 6.4mOhm @ 16A, 10V | 2V @ 50µA | 28nC @ 5V | ±20V | 3620pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO |
3.222 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Ta) | 4.5V, 10V | 9.1mOhm @ 13A, 10V | 2V @ 30µA | 18nC @ 5V | ±20V | 2300pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 10A 8DSO |
8.694 |
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OptiMOS™ | N-Channel | MOSFET (Metal Oxide) | 30V | 10A (Tc) | 4.5V, 10V | 9.7mOhm @ 13A, 10V | 2V @ 30µA | 16nC @ 5V | ±20V | 2130pF @ 15V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 9.2A 8DSO |
6.588 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 9.2A (Ta) | 10V | 13mOhm @ 11.3A, 10V | 2.2V @ 140µA | 81nC @ 10V | ±25V | 3520pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | P-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 7.4A 8DSO |
8.802 |
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OptiMOS™ | P-Channel | MOSFET (Metal Oxide) | 30V | 7.4A (Ta) | 10V | 20mOhm @ 9.1A, 10V | 1.5V @ 100µA | 54nC @ 10V | ±25V | 2330pF @ 25V | - | 1.56W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 60V 3.44A 8DSO |
8.964 |
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SIPMOS® | P-Channel | MOSFET (Metal Oxide) | 60V | 3.44A (Ta) | 10V | 130mOhm @ 3.44A, 10V | 4V @ 1mA | 30nC @ 10V | ±20V | 875pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-DSO-8 | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
7.776 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3.870 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
8.334 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 4.5V, 10V | 45Ohm @ 120mA, 10V | 2.3V @ 94µA | 6.6nC @ 10V | ±20V | 150pF @ 25V | - | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT-223 |
7.074 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 240V 350MA SOT-223 |
6.912 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 240V | 350mA (Ta) | 0V, 10V | 6Ohm @ 350mA, 10V | 1V @ 108µA | 5.7nC @ 5V | ±20V | 108pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
4.860 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
3.114 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |
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Infineon Technologies |
MOSFET N-CH 600V 120MA SOT-223 |
5.256 |
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SIPMOS® | N-Channel | MOSFET (Metal Oxide) | 600V | 120mA (Ta) | 0V, 10V | 45Ohm @ 120mA, 10V | 1V @ 94µA | 4.9nC @ 5V | ±20V | 146pF @ 25V | Depletion Mode | 1.8W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | PG-SOT223-4 | TO-261-4, TO-261AA |