Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 677/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 20V 36A TO-262 |
8.712 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | ±20V | 550pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 92A TO-262 |
7.794 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 59A TO-262 |
5.022 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 59A (Tc) | 4.5V, 10V | 9.5mOhm @ 21A, 10V | 2.25V @ 25µA | 15nC @ 4.5V | ±20V | 1210pF @ 15V | - | 57W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 92A TO-262 |
7.236 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 92A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 2.45V @ 250µA | 24nC @ 4.5V | ±20V | 2150pF @ 10V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 105A TO-262 |
3.580 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 105A (Tc) | 4.5V, 10V | 6mOhm @ 21A, 10V | 2.25V @ 250µA | 35nC @ 4.5V | ±20V | 2840pF @ 15V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
3.114 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 10V | 13.6mOhm @ 31A, 10V | 4V @ 250µA | 46nC @ 10V | ±20V | 1460pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 61A TO-262 |
7.506 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 61A (Tc) | 10V | 11mOhm @ 37A, 10V | 4V @ 250µA | 64nC @ 10V | ±20V | 1720pF @ 25V | - | 91W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 60V 14A TO220FP |
5.958 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 14A (Tc) | 10V | 71mOhm @ 7.8A, 10V | 4V @ 250µA | 20nC @ 10V | ±20V | 370pF @ 25V | - | 29W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 20V 77A TO-262 |
5.562 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 77A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 19nC @ 4.5V | ±20V | 1996pF @ 10V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 450V 4.9A TO-220AB |
5.958 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 4.9A (Tc) | 10V | 1.2Ohm @ 2.9A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 20V 180A TO-220AB |
5.634 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 180A (Tc) | 4.5V, 10V | 4mOhm @ 90A, 10V | 3V @ 250µA | 79nC @ 4.5V | ±20V | 5090pF @ 10V | - | 210W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 60V 75A TO-262 |
3.978 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 60V | 75A (Tc) | 10V | 8.5mOhm @ 51A, 10V | 4V @ 100µA | 86nC @ 10V | ±20V | 2810pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 85A D2PAK |
4.356 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 85A (Tc) | 4.5V, 7V | 8mOhm @ 51A, 7V | 700mV @ 250µA | 78nC @ 4.5V | ±10V | 3300pF @ 15V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 600V 2.2A TO-262 |
2.538 |
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- | N-Channel | MOSFET (Metal Oxide) | 600V | 2.2A (Tc) | 10V | 4.4Ohm @ 1.3A, 10V | 4V @ 250µA | 18nC @ 10V | ±20V | 350pF @ 25V | - | 3.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 250V 8.1A TO-220-5 |
7.146 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 8.1A (Tc) | 10V | 450mOhm @ 4.9A, 10V | 4V @ 250µA | 41nC @ 10V | ±20V | 770pF @ 25V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 200V 18A TO-262 |
2.412 |
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- | N-Channel | MOSFET (Metal Oxide) | 200V | 18A (Tc) | 10V | 180mOhm @ 11A, 10V | 4V @ 250µA | 70nC @ 10V | ±20V | 1300pF @ 25V | - | 3.1W (Ta), 130W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 400V 5.5A TO-220-5 |
5.832 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 400V | 5.5A (Tc) | 10V | 1Ohm @ 3.3A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 700pF @ 25V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 30V 38A TO-262 |
8.226 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 38A (Tc) | 4.5V, 10V | 26mOhm @ 20A, 10V | 1V @ 250µA | 26nC @ 4.5V | ±16V | 870pF @ 25V | - | 3.8W (Ta), 68W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 75A TO-262 |
3.186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 75A (Tc) | 10V | 5.5mOhm @ 75A, 10V | 4V @ 250µA | 100nC @ 10V | ±20V | 3000pF @ 25V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 500V 4.5A TO-220-5 |
6.426 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 500V | 4.5A (Tc) | 10V | 1.5Ohm @ 2.7A, 10V | 4V @ 250µA | 38nC @ 10V | ±20V | 610pF @ 25V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Vishay Siliconix |
MOSFET N-CH 450V 4.9A TO220FP |
4.590 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 4.9A (Tc) | 10V | 630mOhm @ 2.9A, 10V | 4V @ 250µA | 80nC @ 10V | ±20V | 1400pF @ 25V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 200V 16A TO-262 |
7.074 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 16A (Tc) | 10V | 170mOhm @ 9.8A, 10V | 5.5V @ 250µA | 50nC @ 10V | ±30V | 1100pF @ 25V | - | 3.8W (Ta), 140W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 450V 3.4A TO220FP |
5.976 |
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- | N-Channel | MOSFET (Metal Oxide) | 450V | 3.4A (Tc) | 10V | 1.2Ohm @ 2A, 10V | 4V @ 250µA | 45nC @ 10V | ±20V | 680pF @ 25V | - | 35W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220-3 Full Pack, Isolated Tab |
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Infineon Technologies |
MOSFET N-CH 150V 23A TO-262 |
3.798 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 23A (Tc) | 10V | 90mOhm @ 14A, 10V | 5.5V @ 250µA | 56nC @ 10V | ±30V | 1200pF @ 25V | - | 3.8W (Ta), 136W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Vishay Siliconix |
MOSFET N-CH 200V 9A TO-220-5 |
5.418 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9A (Tc) | 10V | 400mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | ±20V | 800pF @ 25V | Current Sensing | 74W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-5 | TO-220-5 |
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Infineon Technologies |
MOSFET N-CH 30V 64A TO-262 |
5.994 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 64A (Tc) | 4.5V, 10V | 12mOhm @ 34A, 10V | 1V @ 250µA | 33nC @ 4.5V | ±16V | 1650pF @ 25V | - | 94W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 40V 130A TO-262 |
7.596 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 130A (Tc) | 4.5V, 10V | 6.5mOhm @ 78A, 10V | 1V @ 250µA | 100nC @ 4.5V | ±16V | 5330pF @ 25V | - | 3.8W (Ta), 200W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 55V 85A TO-262 |
2.592 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 85A (Tc) | 10V | 11mOhm @ 43A, 10V | 4V @ 250µA | 120nC @ 10V | ±20V | 3210pF @ 25V | - | 180W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 30V 54A TO-220AB |
2.178 |
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FETKY™ | N-Channel | MOSFET (Metal Oxide) | 30V | 54A (Tc) | 4.5V, 10V | 14mOhm @ 32A, 10V | 1V @ 250µA | 44nC @ 4.5V | ±16V | 2300pF @ 25V | - | 2W (Ta), 70W (Tc) | -55°C ~ 150°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 64A TO-262 |
6.768 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 64A (Tc) | 10V | 14mOhm @ 32A, 10V | 4V @ 250µA | 81nC @ 10V | ±20V | 1970pF @ 25V | - | 3.8W (Ta), 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |