Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 659/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-220AB |
8.532 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 75A TO-262 |
5.148 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 75A (Tc) | 4.5V, 10V | 8mOhm @ 52A, 10V | 3V @ 250µA | 60nC @ 5V | ±16V | 2880pF @ 25V | - | 130W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET P-CH 55V 14A TO220FP |
5.490 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 14A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 33W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | TO-220AB Full-Pak | TO-220-3 Full Pack |
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Infineon Technologies |
MOSFET N-CH 55V 26A DPAK |
5.274 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 42A I-PAK |
2.844 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 42A (Tc) | 4.5V, 10V | 13.5mOhm @ 36A, 10V | 3V @ 250µA | 35nC @ 5V | ±16V | 1570pF @ 25V | - | 110W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 26A I-PAK |
7.596 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET P-CH 55V 20A I-PAK |
2.988 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 55V | 20A (Tc) | 4.5V, 10V | 105mOhm @ 3.4A, 10V | 1V @ 250µA | 47nC @ 10V | ±20V | 660pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Through Hole | I-PAK | TO-251-3 Short Leads, IPak, TO-251AA |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-220AB |
2.340 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-220AB | TO-220-3 |
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Infineon Technologies |
MOSFET N-CH 55V 51A TO-262 |
6.732 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 51A (Tc) | 4.5V, 10V | 13.5mOhm @ 31A, 10V | 3V @ 250µA | 36nC @ 5V | ±16V | 1620pF @ 25V | - | 80W (Tc) | -55°C ~ 175°C (TJ) | Through Hole | TO-262 | TO-262-3 Long Leads, I²Pak, TO-262AA |
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Infineon Technologies |
MOSFET N-CH 20V 36A D2PAK |
2.898 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 36A (Tc) | 4.5V, 10V | 16mOhm @ 15A, 10V | 2.55V @ 250µA | 7.2nC @ 4.5V | ±20V | 550pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 37A DPAK |
3.366 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 37A (Tc) | 4.5V, 10V | 15mOhm @ 15A, 10V | 2.55V @ 250µA | 7.1nC @ 4.5V | ±20V | 560pF @ 10V | - | 35W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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Infineon Technologies |
MOSFET N-CH 55V 26A DPAK |
2.988 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 55V | 26A (Tc) | 4.5V, 10V | 50mOhm @ 4.7A, 10V | 1V @ 250µA | 42nC @ 10V | ±20V | 740pF @ 50V | - | 79W (Tc) | -40°C ~ 175°C (TJ) | Surface Mount | D-Pak | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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STMicroelectronics |
MOSFET N-CH 100V 180A ISOTOP |
8.802 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 180A (Tc) | 10V | 6Ohm @ 40A, 10V | 4V @ 250µA | 795nC @ 10V | ±20V | 21000pF @ 25V | - | 360W (Tc) | -55°C ~ 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 100V 220A ISOTOP |
6.444 |
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STripFET™ | N-Channel | MOSFET (Metal Oxide) | 100V | 220A (Tc) | 10V | 5.5mOhm @ 125A, 10V | 4V @ 250µA | 900nC @ 10V | ±20V | 31000pF @ 25V | - | 500W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 900V 26A ISOTOP |
3.852 |
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- | N-Channel | MOSFET (Metal Oxide) | 900V | 26A (Tc) | 10V | 300mOhm @ 13A, 10V | 3.75V @ 1mA | 660nC @ 10V | ±30V | 1770pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 650V 48A ISOTOP |
2.250 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 650V | 48A (Tc) | 10V | 110mOhm @ 22.5A, 10V | 5V @ 250µA | 134nC @ 10V | ±30V | 3800pF @ 25V | - | 450W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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STMicroelectronics |
MOSFET N-CH 500V 70A ISOTOP |
5.490 |
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MDmesh™ | N-Channel | MOSFET (Metal Oxide) | 500V | 70A (Tc) | 10V | 50mOhm @ 30A, 10V | 5V @ 250µA | 266nC @ 10V | ±30V | 7500pF @ 25V | - | 600W (Tc) | 150°C (TJ) | Chassis Mount | ISOTOP® | ISOTOP |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
7.776 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 19A 8-SOIC |
5.796 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 19A (Ta) | 4.5V, 10V | 4.5mOhm @ 19A, 10V | 2.25V @ 250µA | 44nC @ 4.5V | ±20V | 3710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 18A 8-SOIC |
4.320 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 18A (Ta) | 4.5V, 10V | 5mOhm @ 17A, 10V | 2.25V @ 250µA | 50nC @ 4.5V | ±20V | 4500pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 20A 8-SOIC |
2.124 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 20A (Ta) | 4.5V, 10V | 4mOhm @ 20A, 10V | 2.32V @ 250µA | 51nC @ 4.5V | ±20V | 4310pF @ 15V | - | 2.5W (Ta) | -55°C ~ 155°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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ON Semiconductor |
MOSFET N-CH 52V 2.6A SOT223 |
8.874 |
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- | N-Channel | MOSFET (Metal Oxide) | 52V | 2.6A (Ta) | 3V, 10V | 125mOhm @ 2.6A, 10V | 2.5V @ 100µA | 7nC @ 4.5V | ±15V | 250pF @ 35V | - | 1.69W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
7.056 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 5V | 120mOhm @ 1.5A, 5V | 2V @ 250µA | 15nC @ 5V | ±15V | 440pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |
7.038 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 5V | 175mOhm @ 1A, 5V | 2V @ 250µA | 10nC @ 5V | ±15V | 270pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 (TO-261) | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 2A SOT223 |
5.580 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 2A (Ta) | 10V | 160mOhm @ 1A, 10V | 4V @ 250µA | 14nC @ 10V | ±20V | 280pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 60V 3A SOT223 |
3.402 |
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- | N-Channel | MOSFET (Metal Oxide) | 60V | 3A (Ta) | 10V | 110mOhm @ 1.5A, 10V | 4V @ 250µA | 22nC @ 10V | ±20V | 455pF @ 25V | - | 1.3W (Ta) | -55°C ~ 175°C (TJ) | Surface Mount | SOT-223 | TO-261-4, TO-261AA |
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ON Semiconductor |
MOSFET N-CH 24V 12A DPAK |
6.030 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 12A (Ta), 85A (Tc) | 4.5V, 10V | 5.2mOhm @ 20A, 10V | 2V @ 250µA | 17.7nC @ 5V | ±20V | 2050pF @ 20V | - | 1.25W (Ta), 78.1W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 28V 60A DPAK |
7.092 |
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- | N-Channel | MOSFET (Metal Oxide) | 28V | 60A (Tc) | 4.5V, 10V | 7.5mOhm @ 30A, 10V | 3V @ 250µA | 30nC @ 4.5V | ±20V | 2150pF @ 24V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 30V 8.4A DPAK |
5.004 |
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- | N-Channel | MOSFET (Metal Oxide) | 30V | 8.4A (Ta), 68A (Tc) | 4.5V, 10V | 10mOhm @ 20A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 2400pF @ 24V | - | 1.04W (Ta), 75W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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ON Semiconductor |
MOSFET N-CH 24V 30A DPAK |
8.280 |
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- | N-Channel | MOSFET (Metal Oxide) | 24V | 30A (Ta) | 4.5V, 10V | 14.5mOhm @ 30A, 10V | 3V @ 250µA | 20nC @ 4.5V | ±20V | 1000pF @ 20V | - | 75W (Tj) | -55°C ~ 150°C (TJ) | Surface Mount | DPAK | TO-252-3, DPak (2 Leads + Tab), SC-63 |