Transistoren - FETs, MOSFETs - Single
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KategorieHalbleiter / Transistoren / Transistoren - FETs, MOSFETs - Single
Datensätze 29.970
Seite 642/999
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Serie | FET-Typ | Technologie | Drain to Source Voltage (Vdss) | Strom - Kontinuierliche Entleerung (Id) bei 25 ° C. | Antriebsspannung (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs (th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Eingangskapazität (Ciss) (Max) @ Vds | FET-Funktion | Verlustleistung (max.) | Betriebstemperatur | Montagetyp | Lieferantengerätepaket | Paket / Fall |
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Infineon Technologies |
MOSFET N-CH 30V 90A D2PAK |
7.470 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 90A (Tc) | 4.5V, 10V | 9mOhm @ 15A, 10V | 3V @ 250µA | 41nC @ 5V | ±20V | 2672pF @ 16V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
6.336 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET N-CH 20V 110A D2PAK |
3.508 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | 110A (Tc) | 4.5V, 10V | 6mOhm @ 15A, 10V | 3V @ 250µA | 44nC @ 4.5V | ±20V | 2980pF @ 10V | - | 3.1W (Ta), 120W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 30V 4A 6-TSOP |
4.320 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 4A (Ta) | 4.5V, 10V | 85mOhm @ 4A, 10V | 1V @ 250µA | 17nC @ 10V | ±20V | 535pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 8-SOIC |
5.544 |
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FETKY™ | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | Schottky Diode (Isolated) | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 3.4A 6-TSOP |
6.426 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 3.4A (Ta) | 4.5V, 10V | 112mOhm @ 3.4A, 10V | 3V @ 250µA | 37nC @ 10V | ±20V | 1110pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 40V 2.5A 6-TSOP |
3.582 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 2.5A (Ta) | 4.5V, 10V | 198mOhm @ 2.5A, 10V | 3V @ 250µA | 21nC @ 10V | ±20V | 680pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET P-CH 30V 3.8A 6-TSOP |
4.680 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 3.8A (Ta) | 4.5V, 10V | 98mOhm @ 3.8A, 10V | 2.5V @ 250µA | 17nC @ 10V | ±20V | 511pF @ 25V | - | 2W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | Micro6™(TSOP-6) | SOT-23-6 Thin, TSOT-23-6 |
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Infineon Technologies |
MOSFET N-CH 200V 9.3A D2PAK |
6.876 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 9.3A (Tc) | 10V | 300mOhm @ 5.4A, 10V | 4V @ 250µA | 35nC @ 10V | ±20V | 575pF @ 25V | - | 82W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
5.256 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Vishay Siliconix |
MOSFET N-CH 250V 14A D2PAK |
3.436 |
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- | N-Channel | MOSFET (Metal Oxide) | 250V | 14A (Tc) | 10V | 240mOhm @ 8.4A, 10V | 4V @ 250µA | 54nC @ 10V | ±20V | 1060pF @ 25V | - | 150W (Tc) | -55°C ~ 175°C (TJ) | Surface Mount | D2PAK | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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Infineon Technologies |
MOSFET P-CH 20V 4.3A 8-SOIC |
7.236 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 4.3A (Ta) | - | 100mOhm @ 2A, 10V | - | 40nC @ 10V | - | 750pF @ 20V | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 10.5A 8-SOIC |
5.850 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 10.5A (Ta) | 4.5V, 10V | 15mOhm @ 10.5A, 10V | 3V @ 250µA | 110nC @ 10V | ±20V | 9250pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6.2A 8-SOIC |
3.942 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6.2A (Ta) | 4.5V, 10V | 41mOhm @ 6.2A, 10V | 3V @ 250µA | 80nC @ 10V | ±20V | 3220pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 11.5A 8-SOIC |
4.662 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 11.5A (Tc) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38nC @ 4.5V | ±8V | 3529pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 8-SOIC |
5.130 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 30V 11A 8-SOIC |
3.132 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 30V | 11A (Tc) | 4.5V, 10V | 13.5mOhm @ 11A, 10V | 2.5V @ 250µA | 110nC @ 10V | ±20V | 4030pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 15A 8-SOIC |
5.490 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 15A (Ta) | 2.5V, 4.5V | 8.2mOhm @ 15A, 4.5V | 1.2V @ 250µA | 130nC @ 4.5V | ±12V | 7980pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 20V 8-SOIC |
3.960 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 20V | - | - | - | - | - | - | - | - | - | - | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 8.9A 8-SOIC |
8.784 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8.9A (Ta) | 1.8V, 4.5V | 24mOhm @ 8.7A, 4.5V | 900mV @ 250µA | 20nC @ 4.5V | ±8V | 1877pF @ 10V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 200V 2.5A 8-SOIC |
5.472 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 200V | 2.5A (Ta) | 10V | 170mOhm @ 1.5A, 10V | 5.5V @ 250µA | 39nC @ 10V | ±30V | 940pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 150V 3.6A 8-SOIC |
3.186 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 150V | 3.6A (Ta) | 10V | 90mOhm @ 2.2A, 10V | 5.5V @ 250µA | 41nC @ 10V | ±30V | 990pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 250V 2.2A 8-SOIC |
6.606 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 250V | 2.2A (Ta) | 10V | 230mOhm @ 1.3A, 10V | 5.5V @ 250µA | 38nC @ 10V | ±30V | 930pF @ 25V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC |
6.156 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 2.8V, 10V | 13mOhm @ 10A, 10V | 2V @ 250µA | 44nC @ 4.5V | ±12V | 3430pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 40V 10A 8-SOIC |
5.976 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 40V | 10A (Ta) | 4.5V, 10V | 13mOhm @ 10A, 10V | 3V @ 250µA | 32nC @ 4.5V | ±20V | 2820pF @ 20V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET N-CH 30V 14A 8-SOIC |
7.128 |
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HEXFET® | N-Channel | MOSFET (Metal Oxide) | 30V | 14A (Ta) | 4.5V, 10V | 8.5mOhm @ 14A, 10V | 2.5V @ 250µA | 38nC @ 4.5V | ±20V | 2710pF @ 15V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SO | 8-SOIC (0.154", 3.90mm Width) |
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Infineon Technologies |
MOSFET P-CH 20V 8.6A 8-TSSOP |
3.598 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 20V | 8.6A (Tc) | 2.5V, 4.5V | 15mOhm @ 8.6A, 4.5V | 1.2V @ 250µA | 89nC @ 5V | ±12V | 4300pF @ 15V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 10A 8-TSSOP |
2.538 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 10A (Tc) | 1.8V, 4.5V | 11mOhm @ 10A, 4.5V | 1.2V @ 250µA | 100nC @ 4.5V | ±8V | 5050pF @ 10V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 12V 8A 8-TSSOP |
5.202 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 12V | 8A (Tc) | 1.8V, 4.5V | 14mOhm @ 8A, 4.5V | 1.2V @ 250µA | 81nC @ 4.5V | ±8V | 3470pF @ 10V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |
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Infineon Technologies |
MOSFET P-CH 40V 6A 8-TSSOP |
8.892 |
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HEXFET® | P-Channel | MOSFET (Metal Oxide) | 40V | 6A (Ta) | 4.5V, 10V | 28mOhm @ 6A, 10V | 3V @ 250µA | 62nC @ 4.5V | ±20V | 5220pF @ 25V | - | 1.5W (Ta) | -55°C ~ 150°C (TJ) | Surface Mount | 8-TSSOP | 8-TSSOP (0.173", 4.40mm Width) |